Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

M. Godlewski; A. Szczerbakow; K. Kopalko; E. Lusakowska; K. S A Butcher; E. M. Goldys; T. L. Tansley; A. Barski

doi:10.1109/COMMAD.2002.1237178

Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. S A Butcher, E. M. Goldys, T. L. Tansley, A. Barski

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Abstract

ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	13-16
Number of pages	4
Volume	2002-January
ISBN (Print)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237178
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

Bibliographical note

Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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Godlewski, M., Szczerbakow, A., Kopalko, K., Lusakowska, E., Butcher, K. S. A., Goldys, E. M., Tansley, T. L., & Barski, A. (2002). Atomic layer epitaxy of ZnO for substrates for GaN epitaxy. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (Vol. 2002-January, pp. 13-16). Article 1237178 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2002.1237178

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author = "M. Godlewski and A. Szczerbakow and K. Kopalko and E. Lusakowska and Butcher, \{K. S A\} and Goldys, \{E. M.\} and Tansley, \{T. L.\} and A. Barski",

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Godlewski, M, Szczerbakow, A, Kopalko, K, Lusakowska, E, Butcher, KSA, Goldys, EM, Tansley, TL & Barski, A 2002, Atomic layer epitaxy of ZnO for substrates for GaN epitaxy. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. vol. 2002-January, 1237178, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 13-16, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237178

Atomic layer epitaxy of ZnO for substrates for GaN epitaxy. / Godlewski, M.; Szczerbakow, A.; Kopalko, K. et al.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Vol. 2002-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2002. p. 13-16 1237178.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

AU - Godlewski, M.

AU - Szczerbakow, A.

AU - Kopalko, K.

AU - Lusakowska, E.

AU - Butcher, K. S A

AU - Goldys, E. M.

AU - Tansley, T. L.

AU - Barski, A.

N1 - Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2002

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N2 - ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

AB - ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

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PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

Y2 - 11 December 2002 through 13 December 2002

ER -

Godlewski M, Szczerbakow A, Kopalko K, Lusakowska E, Butcher KSA, Goldys EM et al. Atomic layer epitaxy of ZnO for substrates for GaN epitaxy. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2002. p. 13-16. 1237178 doi: 10.1109/COMMAD.2002.1237178

Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

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