Auger photoelectron coincidence spectroscopy has been used to study the intrinsic and extrinsic satellite contributions to the Ga L23M45M45 Auger line of GaAs. Data have been collected for the Ga L23M45M45 Auger line in coincidence with the 2p3/2 and 2p1/2 photoelectron lines from GaAs. The Ga 2p3/2 photoelectron line has also been collected in coincidence with the satellite on the lower kinetic-energy side of the Ga L23M45M45 Auger line. The relative contributions of the intrinsic loss processes is shown to be negligible, as expected, whereas the extrinsic loss function is shown to be a significant consideration when using these lines in quantitative analysis. No evidence is seen for a difference in the response of the Ga L23M45M45 final-state terms to the presence of a 3d hole at the surface and at the bulk as has been reported in the literature for the As M45VV line.