Automatic design of GaAs digital circuits and devices - From process and material parameters to layout

Tony Parker; David Skellern; Simon J. Mahon; M. L. Parrilla; John W. Archer; Robert A. Batchelor; G. J. Griffiths; W. D. King

doi:10.1109/GAAS.1989.69344

Automatic design of GaAs digital circuits and devices - From process and material parameters to layout

Tony Parker^*, David Skellern, Simon J. Mahon, M. L. Parrilla, John W. Archer, Robert A. Batchelor, G. J. Griffiths, W. D. King

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

The design techniques and tools needed to build optimized digital circuits for molecular beam epitaxy (MBE) processes geared to low-noise microwave and millimeter wave applications are described. The design approach commences with input of the fundamental process parameters and design rules. From these, SPICE models suitable for use in the design of both linear and digital circuits are automatically generated. These, in turn, are used to automatically design and lay out basic logic gates. Simplified models of the gates are extracted for use with a mixed-mode simulator. This entire task, from designer entry of parameters, through generation of accurate and simplified models, to layout, can be completed in less than 90 minutes. An overview is given of the design process, the key problems that had to be addressed in its automation are described, and results for a fabricated circuit are shown.

Original language	English
Title of host publication	11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest
Place of Publication	New York, NY
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	285-288
Number of pages	4
DOIs	https://doi.org/10.1109/GAAS.1989.69344
Publication status	Published - 1989
Event	11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA Duration: 22 Oct 1989 → 25 Oct 1989

Other

Other	11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989
City	San Diego, CA, USA
Period	22/10/89 → 25/10/89

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10.1109/GAAS.1989.69344

Cite this

Parker, T., Skellern, D., Mahon, S. J., Parrilla, M. L., Archer, J. W., Batchelor, R. A., Griffiths, G. J., & King, W. D. (1989). Automatic design of GaAs digital circuits and devices - From process and material parameters to layout. In 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest (pp. 285-288). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/GAAS.1989.69344

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title = "Automatic design of GaAs digital circuits and devices - From process and material parameters to layout",

abstract = "The design techniques and tools needed to build optimized digital circuits for molecular beam epitaxy (MBE) processes geared to low-noise microwave and millimeter wave applications are described. The design approach commences with input of the fundamental process parameters and design rules. From these, SPICE models suitable for use in the design of both linear and digital circuits are automatically generated. These, in turn, are used to automatically design and lay out basic logic gates. Simplified models of the gates are extracted for use with a mixed-mode simulator. This entire task, from designer entry of parameters, through generation of accurate and simplified models, to layout, can be completed in less than 90 minutes. An overview is given of the design process, the key problems that had to be addressed in its automation are described, and results for a fabricated circuit are shown.",

author = "Tony Parker and David Skellern and Mahon, {Simon J.} and Parrilla, {M. L.} and Archer, {John W.} and Batchelor, {Robert A.} and Griffiths, {G. J.} and King, {W. D.}",

year = "1989",

doi = "10.1109/GAAS.1989.69344",

language = "English",

pages = "285--288",

booktitle = "11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 ; Conference date: 22-10-1989 Through 25-10-1989",

}

Parker, T, Skellern, D, Mahon, SJ, Parrilla, ML, Archer, JW, Batchelor, RA, Griffiths, GJ & King, WD 1989, Automatic design of GaAs digital circuits and devices - From process and material parameters to layout. in 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest. Institute of Electrical and Electronics Engineers (IEEE), New York, NY, pp. 285-288, 11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989, San Diego, CA, USA, 22/10/89. https://doi.org/10.1109/GAAS.1989.69344

Automatic design of GaAs digital circuits and devices - From process and material parameters to layout. / Parker, Tony; Skellern, David; Mahon, Simon J. et al.
11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest. New York, NY: Institute of Electrical and Electronics Engineers (IEEE), 1989. p. 285-288.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Automatic design of GaAs digital circuits and devices - From process and material parameters to layout

AU - Parker, Tony

AU - Skellern, David

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AU - Batchelor, Robert A.

AU - Griffiths, G. J.

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AB - The design techniques and tools needed to build optimized digital circuits for molecular beam epitaxy (MBE) processes geared to low-noise microwave and millimeter wave applications are described. The design approach commences with input of the fundamental process parameters and design rules. From these, SPICE models suitable for use in the design of both linear and digital circuits are automatically generated. These, in turn, are used to automatically design and lay out basic logic gates. Simplified models of the gates are extracted for use with a mixed-mode simulator. This entire task, from designer entry of parameters, through generation of accurate and simplified models, to layout, can be completed in less than 90 minutes. An overview is given of the design process, the key problems that had to be addressed in its automation are described, and results for a fabricated circuit are shown.

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Parker T, Skellern D, Mahon SJ, Parrilla ML, Archer JW, Batchelor RA et al. Automatic design of GaAs digital circuits and devices - From process and material parameters to layout. In 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest. New York, NY: Institute of Electrical and Electronics Engineers (IEEE). 1989. p. 285-288 doi: 10.1109/GAAS.1989.69344

Automatic design of GaAs digital circuits and devices - From process and material parameters to layout

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