Automatic design of GaAs digital circuits and devices - From process and material parameters to layout

Tony Parker*, David Skellern, Simon J. Mahon, M. L. Parrilla, John W. Archer, Robert A. Batchelor, G. J. Griffiths, W. D. King

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

The design techniques and tools needed to build optimized digital circuits for molecular beam epitaxy (MBE) processes geared to low-noise microwave and millimeter wave applications are described. The design approach commences with input of the fundamental process parameters and design rules. From these, SPICE models suitable for use in the design of both linear and digital circuits are automatically generated. These, in turn, are used to automatically design and lay out basic logic gates. Simplified models of the gates are extracted for use with a mixed-mode simulator. This entire task, from designer entry of parameters, through generation of accurate and simplified models, to layout, can be completed in less than 90 minutes. An overview is given of the design process, the key problems that had to be addressed in its automation are described, and results for a fabricated circuit are shown.

Original languageEnglish
Title of host publication11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest
Place of PublicationNew York, NY
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages285-288
Number of pages4
DOIs
Publication statusPublished - 1989
Event11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA
Duration: 22 Oct 198925 Oct 1989

Other

Other11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989
CitySan Diego, CA, USA
Period22/10/8925/10/89

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    Parker, T., Skellern, D., Mahon, S. J., Parrilla, M. L., Archer, J. W., Batchelor, R. A., ... King, W. D. (1989). Automatic design of GaAs digital circuits and devices - From process and material parameters to layout. In 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, Technical Digest (pp. 285-288). New York, NY: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/GAAS.1989.69344