Band gap modulation of transition-metal dichalcogenide MX₂ nanosheets by in-plane strain

The electronic properties of quasi-two-dimensional honeycomb structures of MX₂ nanosheets (M=Mo, W and X=S, Se) subjected to in-plane biaxial strain have been investigated using first-principles calculations. We demonstrate that the band gap of MX₂ nanosheets can be widely tuned by applying tensile or compressive strain, and these ultrathin materials undergo a universal reversible semiconductor-metal transition at a critical strain. Compared to WX₂, MoX₂ need a smaller critical tensile strain for the band gap close, and MSe₂ need a smaller critical compressive strain than MS₂. Taking bilayer MoS₂ as an example, the variation of the band structures was studied and the semiconductor-metal transition involves a slightly different physical mechanism between tensile and compressive strain. The ability to tune the band gap of MX₂ nanosheets in a controlled fashion over a wide range of energy opens up the possibility for its usage in a range of application.