Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence

Ewa M. Goldys*, Helen Y. Zuo, Trevor L. Tansley, Matthew R. Phillips, Colin M. Contessa

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Photoluminescence and cathodoluminescence measurements of strained undoped In0.15 Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum well structures with emission lines attributed to the first electron-first heavy hole and first electron-first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In0.15Ga0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In0.15Ga0.85As/Al0.15Ga0.85As our results indicate type II alignment for the light hole band and offset ratio of Q = 0.83.

Original languageEnglish
Pages (from-to)1223-1226
Number of pages4
JournalSuperlattices and Microstructures
Volume23
Issue number6
DOIs
Publication statusPublished - Jun 1998

Keywords

  • band offset
  • quantum wells
  • type I and type II alignment

Fingerprint Dive into the research topics of 'Band offsets in In<sub>0.15</sub>Ga<sub>0.85</sub>As/GaAs and In<sub>0.15</sub>Ga<sub>0.85</sub>As/Al<sub>0.15</sub>Ga<sub>0.85</sub>As studied by photoluminescence and cathodoluminescence'. Together they form a unique fingerprint.

Cite this