Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence

Ewa M. Goldys; Helen Y. Zuo; Trevor L. Tansley; Matthew R. Phillips; Colin M. Contessa

doi:10.1006/spmi.1996.0371

Band offsets in In_0.15Ga_0.85As/GaAs and In_0.15Ga_0.85As/Al_0.15Ga_0.85As studied by photoluminescence and cathodoluminescence

Ewa M. Goldys^*, Helen Y. Zuo, Trevor L. Tansley, Matthew R. Phillips, Colin M. Contessa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence and cathodoluminescence measurements of strained undoped In_0.15 Ga_0.85As/GaAs and In_0.15Ga_0.85As/Al_0.15Ga_0.85As quantum well structures with emission lines attributed to the first electron-first heavy hole and first electron-first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In_0.15Ga_0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In_0.15Ga_0.85As/Al_0.15Ga_0.85As our results indicate type II alignment for the light hole band and offset ratio of Q = 0.83.

Original language	English
Pages (from-to)	1223-1226
Number of pages	4
Journal	Superlattices and Microstructures
Volume	23
Issue number	6
DOIs	https://doi.org/10.1006/spmi.1996.0371
Publication status	Published - Jun 1998

Keywords

band offset
quantum wells
type I and type II alignment

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@article{9986806a9d724ea4a7987342acd90195,

title = "Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence",

abstract = "Photoluminescence and cathodoluminescence measurements of strained undoped In0.15 Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum well structures with emission lines attributed to the first electron-first heavy hole and first electron-first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In0.15Ga0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In0.15Ga0.85As/Al0.15Ga0.85As our results indicate type II alignment for the light hole band and offset ratio of Q = 0.83.",

keywords = "band offset, quantum wells, type I and type II alignment",

author = "Goldys, {Ewa M.} and Zuo, {Helen Y.} and Tansley, {Trevor L.} and Phillips, {Matthew R.} and Contessa, {Colin M.}",

year = "1998",

month = jun,

doi = "10.1006/spmi.1996.0371",

language = "English",

volume = "23",

pages = "1223--1226",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "6",

}

TY - JOUR

T1 - Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence

AU - Goldys, Ewa M.

AU - Zuo, Helen Y.

AU - Tansley, Trevor L.

AU - Phillips, Matthew R.

AU - Contessa, Colin M.

PY - 1998/6

Y1 - 1998/6

N2 - Photoluminescence and cathodoluminescence measurements of strained undoped In0.15 Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum well structures with emission lines attributed to the first electron-first heavy hole and first electron-first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In0.15Ga0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In0.15Ga0.85As/Al0.15Ga0.85As our results indicate type II alignment for the light hole band and offset ratio of Q = 0.83.

AB - Photoluminescence and cathodoluminescence measurements of strained undoped In0.15 Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum well structures with emission lines attributed to the first electron-first heavy hole and first electron-first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In0.15Ga0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In0.15Ga0.85As/Al0.15Ga0.85As our results indicate type II alignment for the light hole band and offset ratio of Q = 0.83.

KW - band offset

KW - quantum wells

KW - type I and type II alignment

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U2 - 10.1006/spmi.1996.0371

DO - 10.1006/spmi.1996.0371

M3 - Article

AN - SCOPUS:0031701629

SN - 0749-6036

VL - 23

SP - 1223

EP - 1226

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 6

ER -

Band offsets in In_0.15Ga_0.85As/GaAs and In_0.15Ga_0.85As/Al_0.15Ga_0.85As studied by photoluminescence and cathodoluminescence

Abstract

Keywords

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