Bi-directional amplifiers for half-duplex transceivers

John W. Archer; Oya Sevimli; Robert A. Batchelor

doi:10.1109/GAAS.1999.803769

Bi-directional amplifiers for half-duplex transceivers

John W. Archer^*, Oya Sevimli, Robert A. Batchelor

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

10 Citations (Scopus)

Abstract

This paper reports a unique bi-directional amplifier (BDA) circuit that combines the symmetry of common-gate connected HEMTs with topologically mirrored input and output matching. Bi-directional behavior of the BDA is demonstrated on fabricated circuits, with identical performance in forward and reverse directions. Between 40 and 45 GHz, 10-dB gain and 8-dB input and output return losses have been measured.

Original language	English
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	251-254
Number of pages	4
ISBN (Electronic)	0780355873
ISBN (Print)	0780355857, 0780355865
DOIs	https://doi.org/10.1109/GAAS.1999.803769
Publication status	Published - Oct 1999
Externally published	Yes
Event	Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA Duration: 17 Oct 1999 → 20 Oct 1999

Other

Other	Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
City	Monterey, CA, USA
Period	17/10/99 → 20/10/99

Access to Document

10.1109/GAAS.1999.803769

Cite this

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title = "Bi-directional amplifiers for half-duplex transceivers",

abstract = "This paper reports a unique bi-directional amplifier (BDA) circuit that combines the symmetry of common-gate connected HEMTs with topologically mirrored input and output matching. Bi-directional behavior of the BDA is demonstrated on fabricated circuits, with identical performance in forward and reverse directions. Between 40 and 45 GHz, 10-dB gain and 8-dB input and output return losses have been measured.",

author = "Archer, {John W.} and Oya Sevimli and Batchelor, {Robert A.}",

year = "1999",

month = oct,

doi = "10.1109/GAAS.1999.803769",

language = "English",

isbn = "0780355857",

pages = "251--254",

booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 17-10-1999 Through 20-10-1999",

}

Archer, JW, Sevimli, O & Batchelor, RA 1999, Bi-directional amplifiers for half-duplex transceivers. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)., 00803769, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 251-254, Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, USA, 17/10/99. https://doi.org/10.1109/GAAS.1999.803769

Bi-directional amplifiers for half-duplex transceivers. / Archer, John W.; Sevimli, Oya; Batchelor, Robert A.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 1999. p. 251-254 00803769.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Bi-directional amplifiers for half-duplex transceivers

AU - Archer, John W.

AU - Sevimli, Oya

AU - Batchelor, Robert A.

PY - 1999/10

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N2 - This paper reports a unique bi-directional amplifier (BDA) circuit that combines the symmetry of common-gate connected HEMTs with topologically mirrored input and output matching. Bi-directional behavior of the BDA is demonstrated on fabricated circuits, with identical performance in forward and reverse directions. Between 40 and 45 GHz, 10-dB gain and 8-dB input and output return losses have been measured.

AB - This paper reports a unique bi-directional amplifier (BDA) circuit that combines the symmetry of common-gate connected HEMTs with topologically mirrored input and output matching. Bi-directional behavior of the BDA is demonstrated on fabricated circuits, with identical performance in forward and reverse directions. Between 40 and 45 GHz, 10-dB gain and 8-dB input and output return losses have been measured.

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DO - 10.1109/GAAS.1999.803769

M3 - Conference proceeding contribution

AN - SCOPUS:0033350371

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SN - 0780355865

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BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)

Y2 - 17 October 1999 through 20 October 1999

ER -

Bi-directional amplifiers for half-duplex transceivers

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