Bias and frequency dependence of FET characteristics

Anthony Edward Parker*, James Grantley Rathmell

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)
84 Downloads (Pure)

Abstract

A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and MESFET behavior permits classification of rate-dependence mechanisms and identification of operating regions that they affect. This reveals a simple structure to the otherwise complicated behavior that has concerned circuit designers. Heating, impact ionization, and trapping contribute to transient behavior through rate-dependence mechanisms. These are illustrated by a simple description. Each has an effect on specific regions of bias and operating frequency. With this insight, it is possible to determine true isodyamic characteristics of HEMTs and MESFETs and to predict operating conditions that will or will not be affected by rate dependence. It is interesting to note that, for some devices, rate dependence can be seen to exist at microwave frequencies and may, therefore, contribute to intermodulation distortion.

Original languageEnglish
Pages (from-to)588-592
Number of pages5
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number2 I
DOIs
Publication statusPublished - Feb 2003

Bibliographical note

Copyright 2003 IEEE. Reprinted from IEEE transactions on microwave theory and techniques. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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