Bias and frequency dependence of FET characteristics

Anthony Edward Parker*, James Grantley Rathmell

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    43 Citations (Scopus)
    101 Downloads (Pure)


    A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and MESFET behavior permits classification of rate-dependence mechanisms and identification of operating regions that they affect. This reveals a simple structure to the otherwise complicated behavior that has concerned circuit designers. Heating, impact ionization, and trapping contribute to transient behavior through rate-dependence mechanisms. These are illustrated by a simple description. Each has an effect on specific regions of bias and operating frequency. With this insight, it is possible to determine true isodyamic characteristics of HEMTs and MESFETs and to predict operating conditions that will or will not be affected by rate dependence. It is interesting to note that, for some devices, rate dependence can be seen to exist at microwave frequencies and may, therefore, contribute to intermodulation distortion.

    Original languageEnglish
    Pages (from-to)588-592
    Number of pages5
    JournalIEEE Transactions on Microwave Theory and Techniques
    Issue number2 I
    Publication statusPublished - Feb 2003

    Bibliographical note

    Copyright 2003 IEEE. Reprinted from IEEE transactions on microwave theory and techniques. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to By choosing to view this document, you agree to all provisions of the copyright laws protecting it.


    Dive into the research topics of 'Bias and frequency dependence of FET characteristics'. Together they form a unique fingerprint.

    Cite this