Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

Xiantao Jiang, Simon Gross, Han Zhang, Zhinan Guo, Michael J. Withford, Alexander Fuerbach*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

Nanosheets of bismuth telluride (Bi2Te3), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi2Te3 solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm2. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi2Te3. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively.

Original languageEnglish
Pages (from-to)543-550
Number of pages8
JournalAnnalen der Physik
Volume528
Issue number7-8
DOIs
Publication statusPublished - 1 Aug 2016

Keywords

  • BiTe
  • femtosecond laser direct-write
  • Q-switched mode-locking
  • Tm:ZBLAN waveguide laser
  • topological insulator

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