Body-bias effect in SOI FinFET for low-power applications

gate length dependence

Angada B. Sachid, Sourabh Khandelwal, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)9781479922178
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan, Province of China
Duration: 28 Apr 201430 Apr 2014

Other

Other2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan, Province of China
CityHsinchu
Period28/04/1430/04/14

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