Body-bias effect in SOI FinFET for low-power applications: gate length dependence

Angada B. Sachid; Sourabh Khandelwal; Chenming Hu

doi:10.1109/VLSI-TSA.2014.6839655

Body-bias effect in SOI FinFET for low-power applications: gate length dependence

Angada B. Sachid, Sourabh Khandelwal, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

4 Citations (Scopus)

Abstract

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	2
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839655
Publication status	Published - 2014
Externally published	Yes
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan Duration: 28 Apr 2014 → 30 Apr 2014

Other

Other	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country/Territory	Taiwan
City	Hsinchu
Period	28/04/14 → 30/04/14

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10.1109/VLSI-TSA.2014.6839655

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@inproceedings{1131c6884b6c4ac699f529ab264cc0c0,

title = "Body-bias effect in SOI FinFET for low-power applications: gate length dependence",

abstract = "We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.",

author = "Sachid, \{Angada B.\} and Sourabh Khandelwal and Chenming Hu",

year = "2014",

doi = "10.1109/VLSI-TSA.2014.6839655",

language = "English",

isbn = "9781479922178",

booktitle = "Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 ; Conference date: 28-04-2014 Through 30-04-2014",

}

Sachid, AB, Khandelwal, S & Hu, C 2014, Body-bias effect in SOI FinFET for low-power applications: gate length dependence. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, 28/04/14. https://doi.org/10.1109/VLSI-TSA.2014.6839655

Body-bias effect in SOI FinFET for low-power applications: gate length dependence. / Sachid, Angada B.; Khandelwal, Sourabh; Hu, Chenming.
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Body-bias effect in SOI FinFET for low-power applications

T2 - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

AU - Sachid, Angada B.

AU - Khandelwal, Sourabh

AU - Hu, Chenming

PY - 2014

Y1 - 2014

N2 - We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

AB - We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

UR - https://www.scopus.com/pages/publications/84904206927

U2 - 10.1109/VLSI-TSA.2014.6839655

DO - 10.1109/VLSI-TSA.2014.6839655

M3 - Conference proceeding contribution

AN - SCOPUS:84904206927

SN - 9781479922178

BT - Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 28 April 2014 through 30 April 2014

ER -

Body-bias effect in SOI FinFET for low-power applications: gate length dependence

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