Bounding attraction areas of a third-order sigma-delta modulator

J. Zhang; P. V. Brennan; P. D. Smith; E. Vinogradova

Bounding attraction areas of a third-order sigma-delta modulator

J. Zhang^*, P. V. Brennan, P. D. Smith, E. Vinogradova

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

This paper introduces a novel approach, using the critical planes tool and noninvertible map theory, to analyze the boundaries of attraction areas for the integrator outputs of third-order sigma-delta modulators. This allows estimation of the clipping level of the modulators and determination of the required on-chip area for switched-capacitors in the implementation of these modulators. This approach is also very flexible and may be applied to the design and implementation of a range of sigma-delta modulator architectures.

Original language	English
Title of host publication	2004 International Conference on Communications, Circuits and Systems, ICCCAS 2004
Place of Publication	Piscataway, NJ; Chengdu; China
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1377-1381
Number of pages	5
Volume	2
ISBN (Print)	0780386477, 9780780386471
Publication status	Published - 2004
Event	2004 International Conference on Communications, Circuits and Systems - Chengdu, China Duration: 27 Jun 2004 → 29 Jun 2004

Other

Other	2004 International Conference on Communications, Circuits and Systems
Country/Territory	China
City	Chengdu
Period	27/06/04 → 29/06/04

Keywords

Absorbing boundary
Critical planes
Noninvertible map
Sigma-delta modulator

Cite this

@inproceedings{e32f3fcd6fde444bb7f85ea58d8b01e0,

title = "Bounding attraction areas of a third-order sigma-delta modulator",

abstract = "This paper introduces a novel approach, using the critical planes tool and noninvertible map theory, to analyze the boundaries of attraction areas for the integrator outputs of third-order sigma-delta modulators. This allows estimation of the clipping level of the modulators and determination of the required on-chip area for switched-capacitors in the implementation of these modulators. This approach is also very flexible and may be applied to the design and implementation of a range of sigma-delta modulator architectures.",

keywords = "Absorbing boundary, Critical planes, Noninvertible map, Sigma-delta modulator",

author = "J. Zhang and Brennan, {P. V.} and Smith, {P. D.} and E. Vinogradova",

year = "2004",

language = "English",

isbn = "0780386477",

volume = "2",

pages = "1377--1381",

booktitle = "2004 International Conference on Communications, Circuits and Systems, ICCCAS 2004",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2004 International Conference on Communications, Circuits and Systems ; Conference date: 27-06-2004 Through 29-06-2004",

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Zhang, J, Brennan, PV, Smith, PD & Vinogradova, E 2004, Bounding attraction areas of a third-order sigma-delta modulator. in 2004 International Conference on Communications, Circuits and Systems, ICCCAS 2004. vol. 2, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ; Chengdu; China, pp. 1377-1381, 2004 International Conference on Communications, Circuits and Systems, Chengdu, China, 27/06/04.

Bounding attraction areas of a third-order sigma-delta modulator. / Zhang, J.; Brennan, P. V.; Smith, P. D. et al.
2004 International Conference on Communications, Circuits and Systems, ICCCAS 2004. Vol. 2 Piscataway, NJ; Chengdu; China: Institute of Electrical and Electronics Engineers (IEEE), 2004. p. 1377-1381.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Bounding attraction areas of a third-order sigma-delta modulator

AU - Zhang, J.

AU - Brennan, P. V.

AU - Smith, P. D.

AU - Vinogradova, E.

PY - 2004

Y1 - 2004

N2 - This paper introduces a novel approach, using the critical planes tool and noninvertible map theory, to analyze the boundaries of attraction areas for the integrator outputs of third-order sigma-delta modulators. This allows estimation of the clipping level of the modulators and determination of the required on-chip area for switched-capacitors in the implementation of these modulators. This approach is also very flexible and may be applied to the design and implementation of a range of sigma-delta modulator architectures.

AB - This paper introduces a novel approach, using the critical planes tool and noninvertible map theory, to analyze the boundaries of attraction areas for the integrator outputs of third-order sigma-delta modulators. This allows estimation of the clipping level of the modulators and determination of the required on-chip area for switched-capacitors in the implementation of these modulators. This approach is also very flexible and may be applied to the design and implementation of a range of sigma-delta modulator architectures.

KW - Absorbing boundary

KW - Critical planes

KW - Noninvertible map

KW - Sigma-delta modulator

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M3 - Conference proceeding contribution

AN - SCOPUS:11244293755

SN - 0780386477

SN - 9780780386471

VL - 2

SP - 1377

EP - 1381

BT - 2004 International Conference on Communications, Circuits and Systems, ICCCAS 2004

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ; Chengdu; China

T2 - 2004 International Conference on Communications, Circuits and Systems

Y2 - 27 June 2004 through 29 June 2004

ER -

Bounding attraction areas of a third-order sigma-delta modulator

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