Broad-band characterization of FET self-heating

Anthony Edward Parker*, James Grantley Rathmell

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)
    38 Downloads (Pure)


    The temperature response of field-effect transistors to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very low time constant. This affects intermodulation at high frequencies, which is examined with the aid of a signal-flow description of the self-heating process. The impact on broad-band intermodulation is confirmed with measurements over a range of biases. Intermodulation measurements are then used to obtain parameters that describe the heating response in the frequency domain. This description is then implemented in a time-domain model suitable for transient analysis and compared with measured heating and cooling step responses.

    Original languageEnglish
    Pages (from-to)2424-2429
    Number of pages6
    JournalIEEE Transactions on Microwave Theory and Techniques
    Issue number7
    Publication statusPublished - Jul 2005

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