Broad-band characterization of FET self-heating

Anthony Edward Parker*, James Grantley Rathmell

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)
33 Downloads (Pure)

Abstract

The temperature response of field-effect transistors to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very low time constant. This affects intermodulation at high frequencies, which is examined with the aid of a signal-flow description of the self-heating process. The impact on broad-band intermodulation is confirmed with measurements over a range of biases. Intermodulation measurements are then used to obtain parameters that describe the heating response in the frequency domain. This description is then implemented in a time-domain model suitable for transient analysis and compared with measured heating and cooling step responses.

Original languageEnglish
Pages (from-to)2424-2429
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume53
Issue number7
DOIs
Publication statusPublished - Jul 2005

Bibliographical note

Copyright 2006 IEEE. Reprinted from IEEE transactions on microwave theory and techniques. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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