The temperature response of field-effect transistors to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very low time constant. This affects intermodulation at high frequencies, which is examined with the aid of a signal-flow description of the self-heating process. The impact on broad-band intermodulation is confirmed with measurements over a range of biases. Intermodulation measurements are then used to obtain parameters that describe the heating response in the frequency domain. This description is then implemented in a time-domain model suitable for transient analysis and compared with measured heating and cooling step responses.
|Number of pages||6|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - Jul 2005|