BSIM-IMG

A compact model for ultrathin-body SOI MOSFETs with back-gate control

Sourabh Khandelwal*, Yogesh Singh Chauhan, Darsen D. Lu, Sriramkumar Venugopalan, Muhammed Ahosan Ul Karim, Angada Bangalore Sachid, Bich Yen Nguyen, Olivier Rozeau, Olivier Faynot, Ali M. Niknejad, Chenming Calvin Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.

Original languageEnglish
Article number6221973
Pages (from-to)2019-2026
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
Publication statusPublished - 2012
Externally publishedYes

Keywords

  • BSIM-IMG
  • compact modeling
  • FDSOI MOSFETs
  • ultrathin-body silicon-on-insulator (UTBSOI) MOSFETs

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