TY - JOUR
T1 - BSIM-IMG
T2 - A compact model for ultrathin-body SOI MOSFETs with back-gate control
AU - Khandelwal, Sourabh
AU - Chauhan, Yogesh Singh
AU - Lu, Darsen D.
AU - Venugopalan, Sriramkumar
AU - Ahosan Ul Karim, Muhammed
AU - Sachid, Angada Bangalore
AU - Nguyen, Bich Yen
AU - Rozeau, Olivier
AU - Faynot, Olivier
AU - Niknejad, Ali M.
AU - Hu, Chenming Calvin
PY - 2012
Y1 - 2012
N2 - In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.
AB - In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.
KW - BSIM-IMG
KW - compact modeling
KW - FDSOI MOSFETs
KW - ultrathin-body silicon-on-insulator (UTBSOI) MOSFETs
UR - http://www.scopus.com/inward/record.url?scp=84864766647&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2198065
DO - 10.1109/TED.2012.2198065
M3 - Article
AN - SCOPUS:84864766647
SN - 0018-9383
VL - 59
SP - 2019
EP - 2026
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 6221973
ER -