BSIM-IMG: compact model for RF-SOI MOSFETs

Pragya Kushwaha, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Aditya Medury, Chenming Hu, Yogesh S. Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

11 Citations (Scopus)

Abstract

Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference (DRC 2015)
Subtitle of host publicationconference digest
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages287-288
Number of pages2
ISBN (Electronic)9781467381345, 9781467381352
ISBN (Print)9781467381369
DOIs
Publication statusPublished - 3 Aug 2015
Externally publishedYes
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • Logic gates
  • MOSFET
  • Radio frequency
  • Semiconductor device modeling
  • Silicon
  • Switches

Fingerprint

Dive into the research topics of 'BSIM-IMG: compact model for RF-SOI MOSFETs'. Together they form a unique fingerprint.

Cite this