BSIM-IMG: compact model for RF-SOI MOSFETs

Pragya Kushwaha; Harshit Agarwal; Sourabh Khandelwal; Juan Pablo Duarte; Aditya Medury; Chenming Hu; Yogesh S. Chauhan

doi:10.1109/DRC.2015.7175688

BSIM-IMG: compact model for RF-SOI MOSFETs

Pragya Kushwaha, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Aditya Medury, Chenming Hu, Yogesh S. Chauhan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

15 Citations (Scopus)

Abstract

Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.

Original language	English
Title of host publication	73rd Annual Device Research Conference (DRC 2015)
Subtitle of host publication	conference digest
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	287-288
Number of pages	2
ISBN (Electronic)	9781467381345, 9781467381352
ISBN (Print)	9781467381369
DOIs	https://doi.org/10.1109/DRC.2015.7175688
Publication status	Published - 3 Aug 2015
Externally published	Yes
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 21 Jun 2015 → 24 Jun 2015

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country/Territory	United States
City	Columbus
Period	21/06/15 → 24/06/15

Keywords

Logic gates
MOSFET
Radio frequency
Semiconductor device modeling
Silicon
Switches

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10.1109/DRC.2015.7175688

Cite this

@inproceedings{581cbfc3bda14af5bdf46d83e2f647eb,

title = "BSIM-IMG: compact model for RF-SOI MOSFETs",

abstract = "Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.",

keywords = "Logic gates, MOSFET, Radio frequency, Semiconductor device modeling, Silicon, Switches",

author = "Pragya Kushwaha and Harshit Agarwal and Sourabh Khandelwal and Duarte, {Juan Pablo} and Aditya Medury and Chenming Hu and Chauhan, {Yogesh S.}",

year = "2015",

month = aug,

day = "3",

doi = "10.1109/DRC.2015.7175688",

language = "English",

isbn = "9781467381369",

pages = "287--288",

booktitle = "73rd Annual Device Research Conference (DRC 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",

}

Kushwaha, P, Agarwal, H, Khandelwal, S, Duarte, JP, Medury, A, Hu, C & Chauhan, YS 2015, BSIM-IMG: compact model for RF-SOI MOSFETs. in 73rd Annual Device Research Conference (DRC 2015): conference digest., 7175688, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 287-288, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 21/06/15. https://doi.org/10.1109/DRC.2015.7175688

BSIM-IMG: compact model for RF-SOI MOSFETs. / Kushwaha, Pragya; Agarwal, Harshit; Khandelwal, Sourabh et al.
73rd Annual Device Research Conference (DRC 2015): conference digest. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 287-288 7175688.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - BSIM-IMG

T2 - 73rd Annual Device Research Conference, DRC 2015

AU - Kushwaha, Pragya

AU - Agarwal, Harshit

AU - Khandelwal, Sourabh

AU - Duarte, Juan Pablo

AU - Medury, Aditya

AU - Hu, Chenming

AU - Chauhan, Yogesh S.

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.

AB - Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.

KW - Logic gates

KW - MOSFET

KW - Radio frequency

KW - Semiconductor device modeling

KW - Silicon

KW - Switches

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U2 - 10.1109/DRC.2015.7175688

DO - 10.1109/DRC.2015.7175688

M3 - Conference proceeding contribution

AN - SCOPUS:84957682183

SN - 9781467381369

SP - 287

EP - 288

BT - 73rd Annual Device Research Conference (DRC 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 21 June 2015 through 24 June 2015

ER -

BSIM-IMG: compact model for RF-SOI MOSFETs

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