BSIM-IMG with improved surface potential calculation recipe

Pragya Kushwaha, Chandan Yadav, Harshit Agarwal, Yogesh Singh Chauhan, Jandhyala Srivatsava, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)


In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.

Original languageEnglish
Title of host publication11th IEEE India Conference (INDICON 2014)
Subtitle of host publicationEmerging Trends and Innovation in Technology
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781479953646
ISBN (Print)9781479953622, 9781479953653
Publication statusPublished - 3 Feb 2015
Externally publishedYes
Event11th IEEE India Conference, INDICON 2014 - Pune, India
Duration: 11 Dec 201413 Dec 2014


Other11th IEEE India Conference, INDICON 2014


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