BSIM-IMG with improved surface potential calculation recipe

Pragya Kushwaha; Chandan Yadav; Harshit Agarwal; Yogesh Singh Chauhan; Jandhyala Srivatsava; Sourabh Khandelwal; Juan Pablo Duarte; Chenming Hu

doi:10.1109/INDICON.2014.7030498

BSIM-IMG with improved surface potential calculation recipe

Pragya Kushwaha, Chandan Yadav, Harshit Agarwal, Yogesh Singh Chauhan, Jandhyala Srivatsava, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

Abstract

In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.

Original language	English
Title of host publication	11th IEEE India Conference (INDICON 2014)
Subtitle of host publication	Emerging Trends and Innovation in Technology
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479953646
ISBN (Print)	9781479953622, 9781479953653
DOIs	https://doi.org/10.1109/INDICON.2014.7030498
Publication status	Published - 3 Feb 2015
Externally published	Yes
Event	11th IEEE India Conference, INDICON 2014 - Pune, India Duration: 11 Dec 2014 → 13 Dec 2014

Other

Other	11th IEEE India Conference, INDICON 2014
Country/Territory	India
City	Pune
Period	11/12/14 → 13/12/14

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10.1109/INDICON.2014.7030498

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Kushwaha, P., Yadav, C., Agarwal, H., Chauhan, Y. S., Srivatsava, J., Khandelwal, S., Duarte, J. P., & Hu, C. (2015). BSIM-IMG with improved surface potential calculation recipe. In 11th IEEE India Conference (INDICON 2014): Emerging Trends and Innovation in Technology (pp. 1-4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/INDICON.2014.7030498

@inproceedings{0901f8c805f54719a9fbc746843d1f2a,

title = "BSIM-IMG with improved surface potential calculation recipe",

abstract = "In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.",

author = "Pragya Kushwaha and Chandan Yadav and Harshit Agarwal and Chauhan, {Yogesh Singh} and Jandhyala Srivatsava and Sourabh Khandelwal and Duarte, {Juan Pablo} and Chenming Hu",

year = "2015",

month = feb,

day = "3",

doi = "10.1109/INDICON.2014.7030498",

language = "English",

isbn = "9781479953622",

pages = "1--4",

booktitle = "11th IEEE India Conference (INDICON 2014)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "11th IEEE India Conference, INDICON 2014 ; Conference date: 11-12-2014 Through 13-12-2014",

}

Kushwaha, P, Yadav, C, Agarwal, H, Chauhan, YS, Srivatsava, J, Khandelwal, S, Duarte, JP & Hu, C 2015, BSIM-IMG with improved surface potential calculation recipe. in 11th IEEE India Conference (INDICON 2014): Emerging Trends and Innovation in Technology. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 11th IEEE India Conference, INDICON 2014, Pune, India, 11/12/14. https://doi.org/10.1109/INDICON.2014.7030498

BSIM-IMG with improved surface potential calculation recipe. / Kushwaha, Pragya; Yadav, Chandan; Agarwal, Harshit et al.
11th IEEE India Conference (INDICON 2014): Emerging Trends and Innovation in Technology. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - BSIM-IMG with improved surface potential calculation recipe

AU - Kushwaha, Pragya

AU - Yadav, Chandan

AU - Agarwal, Harshit

AU - Chauhan, Yogesh Singh

AU - Srivatsava, Jandhyala

AU - Khandelwal, Sourabh

AU - Duarte, Juan Pablo

AU - Hu, Chenming

PY - 2015/2/3

Y1 - 2015/2/3

N2 - In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.

AB - In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.

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DO - 10.1109/INDICON.2014.7030498

M3 - Conference proceeding contribution

SN - 9781479953622

SN - 9781479953653

SP - 1

EP - 4

BT - 11th IEEE India Conference (INDICON 2014)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 11th IEEE India Conference, INDICON 2014

Y2 - 11 December 2014 through 13 December 2014

ER -

BSIM-IMG with improved surface potential calculation recipe

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