BSIM - industry standard compact MOSFET models

Yogesh Singh Chauhan; Sriram Venugopalan; Mohammed A. Karim; Sourabh Khandelwal; Navid Paydavosi; Pankaj Thakur; Ali M. Niknejad; Chenming C. Hu

doi:10.1109/ESSDERC.2012.6343330

BSIM - industry standard compact MOSFET models

Yogesh Singh Chauhan^*, Sriram Venugopalan, Mohammed A. Karim, Sourabh Khandelwal, Navid Paydavosi, Pankaj Thakur, Ali M. Niknejad, Chenming C. Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

43 Citations (Scopus)

Abstract

BSIM compact models have served industry for more than a decade starting with BSIM3 and later BSIM4 and BSIMSOI. Here we will briefly discuss the ongoing work on current and future device models in BSIM group. BSIM6 is the next generation bulk RF MOSFET Model which uses charge based core with physical models adapted from BSIM4. Model fulfills all symmetry tests and shows correct slopes for harmonics. The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Models include all read device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.

Original language	English
Title of host publication	2012 proceedings of the European Solid-State Device Research Conference (ESSDERC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	46-49
Number of pages	4
ISBN (Electronic)	9781467317085, 9781467317061
ISBN (Print)	9781467317078
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343330
Publication status	Published - 2012
Externally published	Yes
Event	Join conference of ESSDERC 2012 and ESSCIRC 2012 - Bordeaux, France Duration: 17 Sept 2012 → 21 Sept 2012

Other

Other	Join conference of ESSDERC 2012 and ESSCIRC 2012
Country/Territory	France
City	Bordeaux
Period	17/09/12 → 21/09/12
Other	The 42th European Solid-State Device research Conference (ESSDERC 2012) runs in parallel to the 38th European Solid-State Circuit Conference (ESSCIRC 2012)

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10.1109/ESSDERC.2012.6343330

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Singh Chauhan, Y., Venugopalan, S., Karim, M. A., Khandelwal, S., Paydavosi, N., Thakur, P., Niknejad, A. M., & Hu, C. C. (2012). BSIM - industry standard compact MOSFET models. In 2012 proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 46-49). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ESSDERC.2012.6343330

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title = "BSIM - industry standard compact MOSFET models",

abstract = "BSIM compact models have served industry for more than a decade starting with BSIM3 and later BSIM4 and BSIMSOI. Here we will briefly discuss the ongoing work on current and future device models in BSIM group. BSIM6 is the next generation bulk RF MOSFET Model which uses charge based core with physical models adapted from BSIM4. Model fulfills all symmetry tests and shows correct slopes for harmonics. The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Models include all read device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.",

author = "{Singh Chauhan}, Yogesh and Sriram Venugopalan and Karim, {Mohammed A.} and Sourabh Khandelwal and Navid Paydavosi and Pankaj Thakur and Niknejad, {Ali M.} and Hu, {Chenming C.}",

year = "2012",

doi = "10.1109/ESSDERC.2012.6343330",

language = "English",

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pages = "46--49",

booktitle = "2012 proceedings of the European Solid-State Device Research Conference (ESSDERC)",

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note = "Join conference of ESSDERC 2012 and ESSCIRC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

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Singh Chauhan, Y, Venugopalan, S, Karim, MA, Khandelwal, S, Paydavosi, N, Thakur, P, Niknejad, AM & Hu, CC 2012, BSIM - industry standard compact MOSFET models. in 2012 proceedings of the European Solid-State Device Research Conference (ESSDERC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 46-49, Join conference of ESSDERC 2012 and ESSCIRC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343330

BSIM - industry standard compact MOSFET models. / Singh Chauhan, Yogesh; Venugopalan, Sriram; Karim, Mohammed A. et al.
2012 proceedings of the European Solid-State Device Research Conference (ESSDERC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 46-49.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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BSIM - industry standard compact MOSFET models

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