BSIM6: Analog and RF compact model for bulk MOSFET

Yogesh Singh Chauhan; Sriramkumar Venugopalan; Maria Anna Chalkiadaki; Muhammed Ahosan Ul Karim; Harshit Agarwal; Sourabh Khandelwal; Navid Paydavosi; Juan Pablo Duarte; Christian C. Enz; Ali M. Niknejad; Chenming Hu

doi:10.1109/TED.2013.2283084

BSIM6: Analog and RF compact model for bulk MOSFET

Yogesh Singh Chauhan^*, Sriramkumar Venugopalan, Maria Anna Chalkiadaki, Muhammed Ahosan Ul Karim, Harshit Agarwal, Sourabh Khandelwal, Navid Paydavosi, Juan Pablo Duarte, Christian C. Enz, Ali M. Niknejad, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

Original language	English
Article number	6632892
Pages (from-to)	234-244
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	2
DOIs	https://doi.org/10.1109/TED.2013.2283084
Publication status	Published - Feb 2014
Externally published	Yes

Keywords

Analog
BSIM4
BSIM6
compact model
RF

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Chauhan, Yogesh Singh ; Venugopalan, Sriramkumar ; Chalkiadaki, Maria Anna ; Karim, Muhammed Ahosan Ul ; Agarwal, Harshit ; Khandelwal, Sourabh ; Paydavosi, Navid ; Duarte, Juan Pablo ; Enz, Christian C. ; Niknejad, Ali M. ; Hu, Chenming. / BSIM6 : Analog and RF compact model for bulk MOSFET. In: IEEE Transactions on Electron Devices. 2014 ; Vol. 61, No. 2. pp. 234-244.

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abstract = "BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.",

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author = "Chauhan, {Yogesh Singh} and Sriramkumar Venugopalan and Chalkiadaki, {Maria Anna} and Karim, {Muhammed Ahosan Ul} and Harshit Agarwal and Sourabh Khandelwal and Navid Paydavosi and Duarte, {Juan Pablo} and Enz, {Christian C.} and Niknejad, {Ali M.} and Chenming Hu",

year = "2014",

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doi = "10.1109/TED.2013.2283084",

language = "English",

volume = "61",

pages = "234--244",

journal = "IEEE Transactions on Electron Devices",

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BSIM6 : Analog and RF compact model for bulk MOSFET. / Chauhan, Yogesh Singh; Venugopalan, Sriramkumar; Chalkiadaki, Maria Anna; Karim, Muhammed Ahosan Ul; Agarwal, Harshit; Khandelwal, Sourabh; Paydavosi, Navid; Duarte, Juan Pablo; Enz, Christian C.; Niknejad, Ali M.; Hu, Chenming.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 2, 6632892, 02.2014, p. 234-244.

Research output: Contribution to journal › Article › peer-review

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AU - Chauhan, Yogesh Singh

AU - Venugopalan, Sriramkumar

AU - Chalkiadaki, Maria Anna

AU - Karim, Muhammed Ahosan Ul

AU - Agarwal, Harshit

AU - Khandelwal, Sourabh

AU - Paydavosi, Navid

AU - Duarte, Juan Pablo

AU - Enz, Christian C.

AU - Niknejad, Ali M.

AU - Hu, Chenming

PY - 2014/2

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KW - RF

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BSIM6: Analog and RF compact model for bulk MOSFET

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