BSIM6

Analog and RF compact model for bulk MOSFET

Yogesh Singh Chauhan*, Sriramkumar Venugopalan, Maria Anna Chalkiadaki, Muhammed Ahosan Ul Karim, Harshit Agarwal, Sourabh Khandelwal, Navid Paydavosi, Juan Pablo Duarte, Christian C. Enz, Ali M. Niknejad, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

Original languageEnglish
Article number6632892
Pages (from-to)234-244
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume61
Issue number2
DOIs
Publication statusPublished - 2014
Externally publishedYes

Keywords

  • Analog
  • BSIM4
  • BSIM6
  • compact model
  • RF

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  • Cite this

    Chauhan, Y. S., Venugopalan, S., Chalkiadaki, M. A., Karim, M. A. U., Agarwal, H., Khandelwal, S., ... Hu, C. (2014). BSIM6: Analog and RF compact model for bulk MOSFET. IEEE Transactions on Electron Devices, 61(2), 234-244. [6632892]. https://doi.org/10.1109/TED.2013.2283084