BSIM6: Symmetric bulk MOSFET model

Y. S. Chauhan; M. A. Karim; S. Venugopalan; S. Khandelwal; P. Thakur; N. Paydavosi; A. B. Sachid; A. Niknejad; C. Hu

BSIM6: Symmetric bulk MOSFET model

Y. S. Chauhan^*, M. A. Karim, S. Venugopalan, S. Khandelwal, P. Thakur, N. Paydavosi, A. B. Sachid, A. Niknejad, C. Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

Abstract

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.

Original language	English
Title of host publication	Nanotechnology 2012
Subtitle of host publication	Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Place of Publication	Boca Raton, Florida
Publisher	CRC Press, Taylor & Francis Group
Pages	724-729
Number of pages	6
Volume	2
ISBN (Print)	9781466562752
Publication status	Published - 2012
Externally published	Yes
Event	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012

Other

Other	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country/Territory	United States
City	Santa Clara, CA
Period	18/06/12 → 21/06/12

Keywords

Analog
BSIM4
BSIM6
Compact model
MOS-FET
RF
Symmetry

Cite this

@inproceedings{0461a7cc61e043a48c07fd5ab202c064,

title = "BSIM6: Symmetric bulk MOSFET model",

abstract = "BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.",

keywords = "Analog, BSIM4, BSIM6, Compact model, MOS-FET, RF, Symmetry",

author = "Chauhan, {Y. S.} and Karim, {M. A.} and S. Venugopalan and S. Khandelwal and P. Thakur and N. Paydavosi and Sachid, {A. B.} and A. Niknejad and C. Hu",

year = "2012",

language = "English",

isbn = "9781466562752",

volume = "2",

pages = "724--729",

booktitle = "Nanotechnology 2012",

publisher = "CRC Press, Taylor & Francis Group",

address = "United States",

note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",

}

Chauhan, YS, Karim, MA, Venugopalan, S, Khandelwal, S, Thakur, P, Paydavosi, N, Sachid, AB, Niknejad, A & Hu, C 2012, BSIM6: Symmetric bulk MOSFET model. in Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational. vol. 2, CRC Press, Taylor & Francis Group, Boca Raton, Florida, pp. 724-729, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 18/06/12.

BSIM6: Symmetric bulk MOSFET model. / Chauhan, Y. S.; Karim, M. A.; Venugopalan, S. et al.
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational. Vol. 2 Boca Raton, Florida: CRC Press, Taylor & Francis Group, 2012. p. 724-729.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - BSIM6

T2 - Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

AU - Chauhan, Y. S.

AU - Karim, M. A.

AU - Venugopalan, S.

AU - Khandelwal, S.

AU - Thakur, P.

AU - Paydavosi, N.

AU - Sachid, A. B.

AU - Niknejad, A.

AU - Hu, C.

PY - 2012

Y1 - 2012

N2 - BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.

AB - BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.

KW - Analog

KW - BSIM4

KW - BSIM6

KW - Compact model

KW - MOS-FET

KW - RF

KW - Symmetry

UR - http://www.scopus.com/inward/record.url?scp=84864929712&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:84864929712

SN - 9781466562752

VL - 2

SP - 724

EP - 729

BT - Nanotechnology 2012

PB - CRC Press, Taylor & Francis Group

CY - Boca Raton, Florida

Y2 - 18 June 2012 through 21 June 2012

ER -

BSIM6: Symmetric bulk MOSFET model

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