BSIM6

Symmetric bulk MOSFET model

Y. S. Chauhan*, M. A. Karim, S. Venugopalan, S. Khandelwal, P. Thakur, N. Paydavosi, A. B. Sachid, A. Niknejad, C. Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

5 Citations (Scopus)

Abstract

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.

Original languageEnglish
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational
Place of PublicationBoca Raton, Florida
PublisherCRC Press, Taylor & Francis Group
Pages724-729
Number of pages6
Volume2
ISBN (Print)9781466562752
Publication statusPublished - 2012
Externally publishedYes
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: 18 Jun 201221 Jun 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period18/06/1221/06/12

    Fingerprint

Keywords

  • Analog
  • BSIM4
  • BSIM6
  • Compact model
  • MOS-FET
  • RF
  • Symmetry

Cite this

Chauhan, Y. S., Karim, M. A., Venugopalan, S., Khandelwal, S., Thakur, P., Paydavosi, N., ... Hu, C. (2012). BSIM6: Symmetric bulk MOSFET model. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Vol. 2, pp. 724-729). Boca Raton, Florida: CRC Press, Taylor & Francis Group.