Abstract
BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.
| Original language | English |
|---|---|
| Title of host publication | Nanotechnology 2012 |
| Subtitle of host publication | Electronics, Devices, Fabrication, MEMS, Fluidics and Computational |
| Place of Publication | Boca Raton, Florida |
| Publisher | CRC Press, Taylor & Francis Group |
| Pages | 724-729 |
| Number of pages | 6 |
| Volume | 2 |
| ISBN (Print) | 9781466562752 |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012 |
Other
| Other | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 |
|---|---|
| Country | United States |
| City | Santa Clara, CA |
| Period | 18/06/12 → 21/06/12 |
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Keywords
- Analog
- BSIM4
- BSIM6
- Compact model
- MOS-FET
- RF
- Symmetry
Cite this
Chauhan, Y. S., Karim, M. A., Venugopalan, S., Khandelwal, S., Thakur, P., Paydavosi, N., ... Hu, C. (2012). BSIM6: Symmetric bulk MOSFET model. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Vol. 2, pp. 724-729). Boca Raton, Florida: CRC Press, Taylor & Francis Group.