Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior

Sheikh Aamir Ahsan, Sudip Ghosh, Khushboo Sharma, Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)


In this paper, a surface-potential-based compact model is proposed for the capacitance of an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, i.e., with gate and source FPs. FP incorporation in a HEMT gives an improvement in terms of enhanced breakdown voltage, reduced gate leakage, and so on, but it affects the capacitive nature of the device, particularly by bringing into existence in a subthreshold region of operation, a feedback miller capacitance between the gate and the drain, and also a capacitance between the drain and the source, therefore, affecting switching characteristics. Here, we model the bias dependence of the terminal capacitances, wherein the expressions developed for intrinsic charges required for capacitance derivation are analytical and physics-based in nature and valid for all regions of device operation. The proposed model, implemented in Verilog-A, is in excellent agreement with the measured data for different temperatures.

Original languageEnglish
Article number7358118
Pages (from-to)565-572
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 1 Feb 2016
Externally publishedYes


  • Capacitance
  • Field plate (FP)
  • GaN high-electron mobility transistors (HEMTs)
  • Modeling
  • Surface potential (SP)


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