Capacitance-Voltage characterization of in-situ Boron doped silicon quantum dot in silicon dioxide

Tian Zhang, Ivan Perez Wurfl, Binesh Puthen-Veettil, Lingfeng Wu, Xuguang Jia, Ziyun Lin, Chien Jen Yang, Gavin Conibeer

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

In this work, we conducted Capacitance-Voltage (C-V) measurement on an inverted Metal-Oxide-Semiconductor (MOS) structure device with in-situ Boron (B) doped silicon quantum dot (QD) materials as the semiconductor layer. The highly conductive P++ Si (0.001-0.005 ohmic.cm) and thermal oxide worked as the metallic gate and the dielectric layer respectively in this MOS structure. We demonstrated that there were less parasitic components in the inverted MOS in vertical structure than MOS in lateral structure. C-V curves showed clear accumulation, depletion and inversion regions as well as a frequency dispersion effect. An analysis on the equivalent circuit model and material electrical properties was presented to explain the frequency dispersion effect. We propose that the frequency dependent shift could be eliminated by removing the frequency-dependent capacitor component (Cm) in series with the ideal MOS equivalent circuit. This capacitor is possibly due to the long dielectric relaxation time in the Si QD material due to the high density of deep defects and the high resistivity. The estimated average doping level extracted from corrected C-V curves is high despite high resistivity.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1115-1118
Number of pages4
ISBN (Electronic)9781479943982, 9781479943999
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period8/06/1413/06/14

Keywords

  • Boron
  • Capacitance-Voltage measurement
  • doping
  • frequency dispersion Silicon quantum dot

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