TY - GEN
T1 - Carrier collection in optically resonant nanostructures for quantum dot solar cells
AU - Wil Tabernig, Stefan
AU - Yuan, Lin
AU - Gao, Yijun
AU - Teh, Zhi Li
AU - Cordaro, Andrea
AU - Pusch, Andreas
AU - Patterson, Robert
AU - Huang, Shujuan
AU - Polman, Albert
PY - 2021
Y1 - 2021
N2 - One of the most interesting - but often underappreciated - absorber materials for solar cells are PbS quantum dot (QD) layers. In principle, the tuneable bandgap, that derives from quantum confinement, together with strong absorption, which allows for thin and flexible layers, as well as the ease of fabrication in form of solution deposition, are each strong arguments for thin-film-QD absorber layer based solar cells. However, so far, those advantages have been met with notable disadvantages which have hindered a faster and more enthusiastic uptake of QD absorber layers in the scientific community. A major hindrance is the low diffusion length of charge carriers in the absorber, limiting the maximum possible absorber thickness, thus requiring an unsatisfying compromise between short-circuit current density (J SC ) and open-circuit voltage (V OC ). In this work, we lay out a path on how to address this issue, by introducing a 3-dimensionally structured p-n heterojunction ( Fig. 1 ) that can increase charge carrier generation, as well as improve extraction in comparison to flat cell geometries.
AB - One of the most interesting - but often underappreciated - absorber materials for solar cells are PbS quantum dot (QD) layers. In principle, the tuneable bandgap, that derives from quantum confinement, together with strong absorption, which allows for thin and flexible layers, as well as the ease of fabrication in form of solution deposition, are each strong arguments for thin-film-QD absorber layer based solar cells. However, so far, those advantages have been met with notable disadvantages which have hindered a faster and more enthusiastic uptake of QD absorber layers in the scientific community. A major hindrance is the low diffusion length of charge carriers in the absorber, limiting the maximum possible absorber thickness, thus requiring an unsatisfying compromise between short-circuit current density (J SC ) and open-circuit voltage (V OC ). In this work, we lay out a path on how to address this issue, by introducing a 3-dimensionally structured p-n heterojunction ( Fig. 1 ) that can increase charge carrier generation, as well as improve extraction in comparison to flat cell geometries.
UR - http://www.scopus.com/inward/record.url?scp=85115958666&partnerID=8YFLogxK
U2 - 10.1109/PVSC43889.2021.9518420
DO - 10.1109/PVSC43889.2021.9518420
M3 - Conference proceeding contribution
AN - SCOPUS:85115958666
SN - 9781665430180
SP - 803
EP - 805
BT - 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Y2 - 20 June 2021 through 25 June 2021
ER -