Abstract
Hot carrier solar cells aims to circumvent fundamental loss mechanisms by extracting carriers before thermalization of hot carriers occurs while also minimizing sub-bandgap losses. The absorber must be able to maintain a hot carrier for a sufficiently long time. Hafnium nitride owing to its phononic properties to slow carrier thermalization is a potential absorber for the hot carrier solar cell. The phonon properties have been measured by Raman spectroscopy. The carrier dynamics in hafnium nitride has been studied by ultrafast pump-probe transient absorption where nanosecond long lifetimes have been observed. The carrier temperature has been extracted from the transient absorption spectra to show the carrier temperature remained above 350 K for a long time with a decay time constant of 1.2 ns.
Original language | English |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 4 |
ISBN (Electronic) | 9781479979448, 9781479979431 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |