Carrier dynamics and phonon properties of hafnium nitride

potential hot carrier solar cell absorber

Simon Chung, Santosh Shrestha, Xiaoming Wen, Hongze Xia, Yu Feng, Shujuan Huang, Neeti Gupta, Gavin Conibeer

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Hot carrier solar cells aims to circumvent fundamental loss mechanisms by extracting carriers before thermalization of hot carriers occurs while also minimizing sub-bandgap losses. The absorber must be able to maintain a hot carrier for a sufficiently long time. Hafnium nitride owing to its phononic properties to slow carrier thermalization is a potential absorber for the hot carrier solar cell. The phonon properties have been measured by Raman spectroscopy. The carrier dynamics in hafnium nitride has been studied by ultrafast pump-probe transient absorption where nanosecond long lifetimes have been observed. The carrier temperature has been extracted from the transient absorption spectra to show the carrier temperature remained above 350 K for a long time with a decay time constant of 1.2 ns.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781479979448, 9781479979431
DOIs
Publication statusPublished - 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

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  • Cite this

    Chung, S., Shrestha, S., Wen, X., Xia, H., Feng, Y., Huang, S., ... Conibeer, G. (2015). Carrier dynamics and phonon properties of hafnium nitride: potential hot carrier solar cell absorber. In 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2015.7356227