Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

M. Godlewski; E. Łusakowska; R. Bozek; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel

Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

M. Godlewski^*, E. Łusakowska, R. Bozek, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers.

Original language	English
Pages (from-to)	212-215
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	2
Publication status	Published - Jan 2004

Cite this

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title = "Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers",

abstract = "We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers.",

author = "M. Godlewski and E. {\L}usakowska and R. Bozek and Goldys, \{E. M.\} and Phillips, \{M. R.\} and T. B{\"o}ttcher and S. Figge and D. Hommel",

year = "2004",

month = jan,

language = "English",

volume = "201",

pages = "212--215",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH, Wiley",

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TY - JOUR

T1 - Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

AU - Godlewski, M.

AU - Łusakowska, E.

AU - Bozek, R.

AU - Goldys, E. M.

AU - Phillips, M. R.

AU - Böttcher, T.

AU - Figge, S.

AU - Hommel, D.

PY - 2004/1

Y1 - 2004/1

N2 - We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers.

AB - We evaluate influence of n-type doping and of the doping level on structural and optical quality of GaN epilayers. We confirm reported previously strong enhancement of light emission from Si doped samples and discuss possible mechanisms of this enhancement. Kelvin probe measurements indicate smoothing of potential fluctuations in the doped layers.

UR - https://www.scopus.com/pages/publications/1242287991

M3 - Article

AN - SCOPUS:1242287991

SN - 0031-8965

VL - 201

SP - 212

EP - 215

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers

Abstract

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