Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer

M. Godlewski*, E. M. Goldys, M. R. Phillips, K. Pakula, J. M. Baranowski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated.

Original languageEnglish
Pages (from-to)22-31
Number of pages10
JournalApplied Surface Science
Volume177
Issue number1-2
DOIs
Publication statusPublished - 1 Jun 2001

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