Abstract
We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated.
Original language | English |
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Pages (from-to) | 22-31 |
Number of pages | 10 |
Journal | Applied Surface Science |
Volume | 177 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1 Jun 2001 |