Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures

M. Godlewski, E. M. Goldys, M. R. Phillips, R. Langer, A. Barski

    Research output: Contribution to journalArticlepeer-review

    22 Citations (Scopus)


    In this paper we evaluate the in-depth homogeneity of GaN epilayers and the influence of electric field present in strained GaN/AlGaN heterostructures and quantum wells on the yellow and "edge" emission in GaN and AlGaN. Our depth-profiling cathodoluminescence measurements show an increased accumulation of defects at the interface. Inhomogeneities in the doping level are reflected by the enhancement of the yellow emission in the interface region. The piezoelectric effect is found to strongly reduce the emission from the strained AlGaN quantum-well barriers. We also show that Ga droplets, commonly found on surfaces of samples grown in Ga-rich conditions, screen the internal electric field in a structure and thus result in a local enhancement of the edge emission intensity.

    Original languageEnglish
    Pages (from-to)495-501
    Number of pages7
    JournalJournal of Materials Research
    Issue number2
    Publication statusPublished - 2000


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