Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures

M. Godlewski; E. M. Goldys; K. S A Butcher; M. R. Phillips; K. Pakula; J. M. Baranowski

doi:10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures

M. Godlewski, E. M. Goldys^*, K. S A Butcher, M. R. Phillips, K. Pakula, J. M. Baranowski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	Physica Status Solidi B: Basic Solid State Physics
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3
Publication status	Published - Nov 2001

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10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

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title = "Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures",

abstract = "Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.",

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AU - Godlewski, M.

AU - Goldys, E. M.

AU - Butcher, K. S A

AU - Phillips, M. R.

AU - Pakula, K.

AU - Baranowski, J. M.

PY - 2001/11

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N2 - Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.

AB - Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.

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Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures

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