Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures

M. Godlewski, E. M. Goldys*, K. S A Butcher, M. R. Phillips, K. Pakula, J. M. Baranowski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalPhysica Status Solidi B: Basic Solid State Physics
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 2001

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