Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher*, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

    Original languageEnglish
    Pages (from-to)80-83
    Number of pages4
    JournalMaterials Letters
    Issue number1-2
    Publication statusPublished - Jan 2004


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