Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher*, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalMaterials Letters
Issue number1-2
Publication statusPublished - Jan 2004


Dive into the research topics of 'Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD'. Together they form a unique fingerprint.

Cite this