Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

null Motlan; E. M. Goldys; K. S A Butcher; T. L. Tansley

doi:10.1016/S0167-577X(03)00419-1

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys, K. S A Butcher^*, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

Original language	English
Pages (from-to)	80-83
Number of pages	4
Journal	Materials Letters
Volume	58
Issue number	1-2
DOIs	https://doi.org/10.1016/S0167-577X(03)00419-1
Publication status	Published - Jan 2004

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title = "Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD",

abstract = "Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.",

author = "Motlan and Goldys, {E. M.} and Butcher, {K. S A} and Tansley, {T. L.}",

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N2 - Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

AB - Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.

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Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Abstract

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