Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

M. Godlewski*, V. Yu Ivanov, E. M. Goldys, M. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.

Original languageEnglish
Pages (from-to)689-694
Number of pages6
JournalActa Physica Polonica A
Volume103
Issue number6
Publication statusPublished - Jun 2003

Fingerprint Dive into the research topics of 'Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission'. Together they form a unique fingerprint.

Cite this