Abstract
Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Original language | English |
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Pages (from-to) | 689-694 |
Number of pages | 6 |
Journal | Acta Physica Polonica A |
Volume | 103 |
Issue number | 6 |
Publication status | Published - Jun 2003 |