Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

M. Godlewski*, E. M. Goldys, M. R. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The influence of sample morphology on optical properties of GaN epilayers is studied. We show that a granular/columnar structure of MOCVD- and MBE-grown films results in strong planar fluctuations of the 'edge' emission of GaN, which is strongly deactivated at grain boundaries. In contrast, the yellow emission of GaN is relatively in-plane homogeneous. We further show large in-depth inhomogeneity of GaN samples and discuss a possible origin of in-plane homogeneity of the yellow photoluminescence.

Original languageEnglish
Pages (from-to)1155-1157
Number of pages3
JournalJournal of Luminescence
Volume87
DOIs
Publication statusPublished - May 2000

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