Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

M. Godlewski; E. M. Goldys; M. R. Phillips

doi:10.1016/S0022-2313(99)00577-3

Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

M. Godlewski^*, E. M. Goldys, M. R. Phillips

^*Corresponding author for this work

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4 Citations (Scopus)

Abstract

The influence of sample morphology on optical properties of GaN epilayers is studied. We show that a granular/columnar structure of MOCVD- and MBE-grown films results in strong planar fluctuations of the 'edge' emission of GaN, which is strongly deactivated at grain boundaries. In contrast, the yellow emission of GaN is relatively in-plane homogeneous. We further show large in-depth inhomogeneity of GaN samples and discuss a possible origin of in-plane homogeneity of the yellow photoluminescence.

Original language	English
Pages (from-to)	1155-1157
Number of pages	3
Journal	Journal of Luminescence
Volume	87
DOIs	https://doi.org/10.1016/S0022-2313(99)00577-3
Publication status	Published - May 2000

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10.1016/S0022-2313(99)00577-3

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title = "Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers",

abstract = "The influence of sample morphology on optical properties of GaN epilayers is studied. We show that a granular/columnar structure of MOCVD- and MBE-grown films results in strong planar fluctuations of the 'edge' emission of GaN, which is strongly deactivated at grain boundaries. In contrast, the yellow emission of GaN is relatively in-plane homogeneous. We further show large in-depth inhomogeneity of GaN samples and discuss a possible origin of in-plane homogeneity of the yellow photoluminescence.",

author = "M. Godlewski and Goldys, {E. M.} and Phillips, {M. R.}",

year = "2000",

month = may,

doi = "10.1016/S0022-2313(99)00577-3",

language = "English",

volume = "87",

pages = "1155--1157",

journal = "Journal of Luminescence",

issn = "0022-2313",

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TY - JOUR

T1 - Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

AU - Godlewski, M.

AU - Goldys, E. M.

AU - Phillips, M. R.

PY - 2000/5

Y1 - 2000/5

N2 - The influence of sample morphology on optical properties of GaN epilayers is studied. We show that a granular/columnar structure of MOCVD- and MBE-grown films results in strong planar fluctuations of the 'edge' emission of GaN, which is strongly deactivated at grain boundaries. In contrast, the yellow emission of GaN is relatively in-plane homogeneous. We further show large in-depth inhomogeneity of GaN samples and discuss a possible origin of in-plane homogeneity of the yellow photoluminescence.

AB - The influence of sample morphology on optical properties of GaN epilayers is studied. We show that a granular/columnar structure of MOCVD- and MBE-grown films results in strong planar fluctuations of the 'edge' emission of GaN, which is strongly deactivated at grain boundaries. In contrast, the yellow emission of GaN is relatively in-plane homogeneous. We further show large in-depth inhomogeneity of GaN samples and discuss a possible origin of in-plane homogeneity of the yellow photoluminescence.

UR - http://www.scopus.com/inward/record.url?scp=0033727964&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(99)00577-3

DO - 10.1016/S0022-2313(99)00577-3

M3 - Article

AN - SCOPUS:0033727964

SN - 0022-2313

VL - 87

SP - 1155

EP - 1157

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

Abstract

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