Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide

E. M. Goldys, T. Paskova, J. Sheely, W. Schaff, L. F. Eastman

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.

    Original languageEnglish
    Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages133-136
    Number of pages4
    Volume2000-January
    ISBN (Print)0780366980
    DOIs
    Publication statusPublished - 2000
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
    Duration: 6 Dec 20008 Dec 2000

    Other

    OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
    CountryAustralia
    CityBundoora
    Period6/12/008/12/00

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