Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide

E. M. Goldys; T. Paskova; J. Sheely; W. Schaff; L. F. Eastman

doi:10.1109/COMMAD.2000.1022909

Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide

E. M. Goldys
, T. Paskova
, J. Sheely
, W. Schaff
, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	133-136
Number of pages	4
Volume	2000-January
ISBN (Print)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022909
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

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10.1109/COMMAD.2000.1022909

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Goldys, E. M., Paskova, T., Sheely, J., Schaff, W., & Eastman, L. F. (2000). Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 133-136). Article 1022909 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022909

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title = "Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide",

abstract = "Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.",

author = "Goldys, \{E. M.\} and T. Paskova and J. Sheely and W. Schaff and Eastman, \{L. F.\}",

year = "2000",

doi = "10.1109/COMMAD.2000.1022909",

language = "English",

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pages = "133--136",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

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note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

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Goldys, EM, Paskova, T, Sheely, J, Schaff, W & Eastman, LF 2000, Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide. in COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022909, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 133-136, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022909

Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide. / Goldys, E. M.; Paskova, T.; Sheely, J. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 133-136 1022909.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Schaff, W.

AU - Eastman, L. F.

PY - 2000

Y1 - 2000

N2 - Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.

AB - Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.

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M3 - Conference proceeding contribution

AN - SCOPUS:84949785951

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EP - 136

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

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T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

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Goldys EM, Paskova T, Sheely J, Schaff W, Eastman LF. Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 133-136. 1022909 doi: 10.1109/COMMAD.2000.1022909

Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide

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