Channel current model with real device effects in BSIM-IMG

Sourabh Khandelwal*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

This chapter describes the drain current model in BSIM-IMG. The core drain current model discussed in Chapter 2, Core Model for Independent Multigate metal oxide field effect transistor (MOSFETs), describes an ideal long channel device. However, actual devices have several physical phenomena (also known as real device effects) which affect the terminal current. This chapter describes these important phenomena and their modeling in BSIM-IMG model. This chapter is divided into various sections. Each section discusses specific device phenomena, details how the phenomena is analytically modeled, and introduces the model parameters associated with the phenomena.

Original languageEnglish
Title of host publicationIndustry standard FDSOI compact model BSIM-IMG for IC design
EditorsChenming Hu, Sourabh Khandelwal, Yogesh Singh Chauhan, Thomas Mckay, Josef Watts, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal
Place of PublicationDuxford ; Cambridge, US ; Kidlington
PublisherElsevier
Chapter3
Pages35-63
Number of pages29
ISBN (Electronic)9780081024027
ISBN (Print)9780081024010
DOIs
Publication statusPublished - 2019
Externally publishedYes

Publication series

NameWoodhead Publishing Series in Electronic and Optical Materials
PublisherElsevier

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