@inbook{11e7175e02d342568a070bd7150ac984,
title = "Channel current model with real device effects in BSIM-IMG",
abstract = "This chapter describes the drain current model in BSIM-IMG. The core drain current model discussed in Chapter 2, Core Model for Independent Multigate metal oxide field effect transistor (MOSFETs), describes an ideal long channel device. However, actual devices have several physical phenomena (also known as real device effects) which affect the terminal current. This chapter describes these important phenomena and their modeling in BSIM-IMG model. This chapter is divided into various sections. Each section discusses specific device phenomena, details how the phenomena is analytically modeled, and introduces the model parameters associated with the phenomena.",
author = "Sourabh Khandelwal",
year = "2019",
doi = "10.1016/B978-0-08-102401-0.00003-0",
language = "English",
isbn = "9780081024010",
series = "Woodhead Publishing Series in Electronic and Optical Materials",
publisher = "Elsevier",
pages = "35--63",
editor = "Chenming Hu and Sourabh Khandelwal and Chauhan, {Yogesh Singh} and Thomas Mckay and Josef Watts and Duarte, {Juan Pablo} and Pragya Kushwaha and Harshit Agarwal",
booktitle = "Industry standard FDSOI compact model BSIM-IMG for IC design",
address = "United States",
}