Channel temperature estimation in GaAs FET devices

Anthony P. Fattorini, Jabra Tarazi, Simon J. Mahon

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    12 Citations (Scopus)


    Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.

    Original languageEnglish
    Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Number of pages4
    ISBN (Print)9781424477326
    Publication statusPublished - 2010
    Event2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 - Anaheim, United States
    Duration: 23 May 201028 May 2010


    Other2010 IEEE MTT-S International Microwave Symposium, MTT - 2010
    Country/TerritoryUnited States


    • Channel temperature
    • FET amplifiers
    • Heat flow
    • Infrared measurement
    • Junction temperature
    • Temperature measurement
    • Thermal analysis
    • Thermal modeling


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