Channel temperature estimation in GaAs FET devices

Anthony P. Fattorini, Jabra Tarazi, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

11 Citations (Scopus)

Abstract

Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.

Original languageEnglish
Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages320-323
Number of pages4
ISBN (Print)9781424477326
DOIs
Publication statusPublished - 2010
Event2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 - Anaheim, United States
Duration: 23 May 201028 May 2010

Other

Other2010 IEEE MTT-S International Microwave Symposium, MTT - 2010
CountryUnited States
CityAnaheim
Period23/05/1028/05/10

Keywords

  • Channel temperature
  • FET amplifiers
  • Heat flow
  • Infrared measurement
  • Junction temperature
  • Temperature measurement
  • Thermal analysis
  • Thermal modeling

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    Fattorini, A. P., Tarazi, J., & Mahon, S. J. (2010). Channel temperature estimation in GaAs FET devices. In 2010 IEEE MTT-S International Microwave Symposium, MTT 2010 (pp. 320-323). [5517099] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/MWSYM.2010.5517099