Channel temperature estimation in GaAs FET devices

Anthony P. Fattorini; Jabra Tarazi; Simon J. Mahon

doi:10.1109/MWSYM.2010.5517099

Channel temperature estimation in GaAs FET devices

Anthony P. Fattorini, Jabra Tarazi, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

12 Citations (Scopus)

Abstract

Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.

Original language	English
Title of host publication	2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	320-323
Number of pages	4
ISBN (Print)	9781424477326
DOIs	https://doi.org/10.1109/MWSYM.2010.5517099
Publication status	Published - 2010
Event	2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 - Anaheim, United States Duration: 23 May 2010 → 28 May 2010

Other

Other	2010 IEEE MTT-S International Microwave Symposium, MTT - 2010
Country/Territory	United States
City	Anaheim
Period	23/05/10 → 28/05/10

Keywords

Channel temperature
FET amplifiers
Heat flow
Infrared measurement
Junction temperature
Temperature measurement
Thermal analysis
Thermal modeling

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10.1109/MWSYM.2010.5517099

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@inproceedings{76797dd8d63149fb9a5db618202c222d,

title = "Channel temperature estimation in GaAs FET devices",

abstract = "Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.",

keywords = "Channel temperature, FET amplifiers, Heat flow, Infrared measurement, Junction temperature, Temperature measurement, Thermal analysis, Thermal modeling",

author = "Fattorini, \{Anthony P.\} and Jabra Tarazi and Mahon, \{Simon J.\}",

year = "2010",

doi = "10.1109/MWSYM.2010.5517099",

language = "English",

isbn = "9781424477326",

pages = "320--323",

booktitle = "2010 IEEE MTT-S International Microwave Symposium, MTT 2010",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 ; Conference date: 23-05-2010 Through 28-05-2010",

}

Fattorini, AP, Tarazi, J & Mahon, SJ 2010, Channel temperature estimation in GaAs FET devices. in 2010 IEEE MTT-S International Microwave Symposium, MTT 2010., 5517099, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 320-323, 2010 IEEE MTT-S International Microwave Symposium, MTT - 2010, Anaheim, California, United States, 23/05/10. https://doi.org/10.1109/MWSYM.2010.5517099

Channel temperature estimation in GaAs FET devices. / Fattorini, Anthony P.; Tarazi, Jabra; Mahon, Simon J.
2010 IEEE MTT-S International Microwave Symposium, MTT 2010. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 320-323 5517099.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Channel temperature estimation in GaAs FET devices

AU - Fattorini, Anthony P.

AU - Tarazi, Jabra

AU - Mahon, Simon J.

PY - 2010

Y1 - 2010

N2 - Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.

AB - Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.

KW - Channel temperature

KW - FET amplifiers

KW - Heat flow

KW - Infrared measurement

KW - Junction temperature

KW - Temperature measurement

KW - Thermal analysis

KW - Thermal modeling

UR - https://www.scopus.com/pages/publications/77957818584

U2 - 10.1109/MWSYM.2010.5517099

DO - 10.1109/MWSYM.2010.5517099

M3 - Conference proceeding contribution

AN - SCOPUS:77957818584

SN - 9781424477326

SP - 320

EP - 323

BT - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2010 IEEE MTT-S International Microwave Symposium, MTT - 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

Channel temperature estimation in GaAs FET devices

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