Projects per year
Abstract
Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.
Original language | English |
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Title of host publication | 2018 13th European Microwave Integrated Circuits Conference proceedings |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 218-221 |
Number of pages | 4 |
ISBN (Electronic) | 9782874870521 |
ISBN (Print) | 9781538652862 |
DOIs | |
Publication status | Published - 2018 |
Event | 13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain Duration: 24 Sept 2018 → 25 Sept 2018 |
Conference
Conference | 13th European Microwave Integrated Circuits Conference, EuMIC 2018 |
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Country/Territory | Spain |
City | Madrid |
Period | 24/09/18 → 25/09/18 |
Keywords
- Gallium arsenide
- HEMTs
- MMICs
- temperature measurement
- thermal analysis
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Dive into the research topics of 'Characterisation of GaAs pHEMT transient thermal response'. Together they form a unique fingerprint.Projects
- 1 Finished
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High performance, optimized chip-scale packaging for millimetre wave and THz integrated circuits
Heimlich, M., Lang, C., Parker, A., Downes, J., Mahon, S., Morosin, R., MQRES (International), M. & PhD Contribution (ARC), P. C.
15/05/15 → 31/12/20
Project: Research