Characterisation of GaAs pHEMT transient thermal response

Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon, Michael C. Heimlich

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.

Original languageEnglish
Title of host publication2018 13th European Microwave Integrated Circuits Conference proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages218-221
Number of pages4
ISBN (Electronic)9782874870521
ISBN (Print)9781538652862
DOIs
Publication statusPublished - 2018
Event13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain
Duration: 24 Sep 201825 Sep 2018

Conference

Conference13th European Microwave Integrated Circuits Conference, EuMIC 2018
CountrySpain
CityMadrid
Period24/09/1825/09/18

Keywords

  • Gallium arsenide
  • HEMTs
  • MMICs
  • temperature measurement
  • thermal analysis

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