Characterisation of GaAs pHEMT transient thermal response

Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon, Michael C. Heimlich

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

Abstract

Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.

LanguageEnglish
Title of host publication2018 13th European Microwave Integrated Circuits Conference proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages218-221
Number of pages4
ISBN (Electronic)9782874870521
ISBN (Print)9781538652862
DOIs
Publication statusPublished - 2018
Event13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain
Duration: 24 Sep 201825 Sep 2018

Conference

Conference13th European Microwave Integrated Circuits Conference, EuMIC 2018
CountrySpain
CityMadrid
Period24/09/1825/09/18

Fingerprint

scale models
temperature measurement
radiant flux density
Heating
optimization
heating
Networks (circuits)
gallium arsenide
Hot Temperature
simulation

Keywords

  • Gallium arsenide
  • HEMTs
  • MMICs
  • temperature measurement
  • thermal analysis

Cite this

Schwitter, B. K., Parker, A. E., Mahon, S. J., & Heimlich, M. C. (2018). Characterisation of GaAs pHEMT transient thermal response. In 2018 13th European Microwave Integrated Circuits Conference proceedings (pp. 218-221). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.23919/EuMIC.2018.8539961
Schwitter, Bryan K. ; Parker, Anthony E. ; Mahon, Simon J. ; Heimlich, Michael C. / Characterisation of GaAs pHEMT transient thermal response. 2018 13th European Microwave Integrated Circuits Conference proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. pp. 218-221
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Schwitter, BK, Parker, AE, Mahon, SJ & Heimlich, MC 2018, Characterisation of GaAs pHEMT transient thermal response. in 2018 13th European Microwave Integrated Circuits Conference proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 218-221, 13th European Microwave Integrated Circuits Conference, EuMIC 2018, Madrid, Spain, 24/09/18. https://doi.org/10.23919/EuMIC.2018.8539961

Characterisation of GaAs pHEMT transient thermal response. / Schwitter, Bryan K.; Parker, Anthony E.; Mahon, Simon J.; Heimlich, Michael C.

2018 13th European Microwave Integrated Circuits Conference proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 218-221.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

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N2 - Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.

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KW - Gallium arsenide

KW - HEMTs

KW - MMICs

KW - temperature measurement

KW - thermal analysis

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Schwitter BK, Parker AE, Mahon SJ, Heimlich MC. Characterisation of GaAs pHEMT transient thermal response. In 2018 13th European Microwave Integrated Circuits Conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 218-221 https://doi.org/10.23919/EuMIC.2018.8539961