Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

A. Tallaire; A. T. Collins; D. Charles; J. Achard; R. Sussmann; A. Gicquel; M. E. Newton; A. M. Edmonds; R. J. Cruddace

doi:10.1016/j.diamond.2006.02.005

Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

A. Tallaire^*, A. T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel, M. E. Newton, A. M. Edmonds, R. J. Cruddace

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

182 Citations (Scopus)

Abstract

Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.

Original language	English
Pages (from-to)	1700-1707
Number of pages	8
Journal	Diamond and Related Materials
Volume	15
Issue number	10
DOIs	https://doi.org/10.1016/j.diamond.2006.02.005
Publication status	Published - Oct 2006

Keywords

Homoepitaxy
Impurity characterisation
Optical properties characterisation
Single crystal growth

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10.1016/j.diamond.2006.02.005

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title = "Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition",

abstract = "Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.",

keywords = "Homoepitaxy, Impurity characterisation, Optical properties characterisation, Single crystal growth",

author = "A. Tallaire and Collins, {A. T.} and D. Charles and J. Achard and R. Sussmann and A. Gicquel and Newton, {M. E.} and Edmonds, {A. M.} and Cruddace, {R. J.}",

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T1 - Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

AU - Tallaire, A.

AU - Collins, A. T.

AU - Charles, D.

AU - Achard, J.

AU - Sussmann, R.

AU - Gicquel, A.

AU - Newton, M. E.

AU - Edmonds, A. M.

AU - Cruddace, R. J.

PY - 2006/10

Y1 - 2006/10

N2 - Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.

AB - Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.

KW - Homoepitaxy

KW - Impurity characterisation

KW - Optical properties characterisation

KW - Single crystal growth

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DO - 10.1016/j.diamond.2006.02.005

M3 - Article

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JO - Diamond and Related Materials

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Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

Abstract

Keywords

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