Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

A. Tallaire*, A. T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel, M. E. Newton, A. M. Edmonds, R. J. Cruddace

*Corresponding author for this work

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.

Original languageEnglish
Pages (from-to)1700-1707
Number of pages8
JournalDiamond and Related Materials
Volume15
Issue number10
DOIs
Publication statusPublished - Oct 2006

Keywords

  • Homoepitaxy
  • Impurity characterisation
  • Optical properties characterisation
  • Single crystal growth

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    Tallaire, A., Collins, A. T., Charles, D., Achard, J., Sussmann, R., Gicquel, A., ... Cruddace, R. J. (2006). Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition. Diamond and Related Materials, 15(10), 1700-1707. https://doi.org/10.1016/j.diamond.2006.02.005