Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

A. Tallaire*, A. T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel, M. E. Newton, A. M. Edmonds, R. J. Cruddace

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    175 Citations (Scopus)

    Abstract

    Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications.

    Original languageEnglish
    Pages (from-to)1700-1707
    Number of pages8
    JournalDiamond and Related Materials
    Volume15
    Issue number10
    DOIs
    Publication statusPublished - Oct 2006

    Keywords

    • Homoepitaxy
    • Impurity characterisation
    • Optical properties characterisation
    • Single crystal growth

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