Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements

Aaron Pereira; Anthony Parker; Michael Heimlich; Neil Weste

doi:10.1109/ARFTG.2016.7501961

Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements

Aaron Pereira^*, Anthony Parker, Michael Heimlich, Neil Weste

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.

Original language	English
Title of host publication	2016 87th ARFTG microwave measurement conference (ARFTG)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Print)	9781509013081
DOIs	https://doi.org/10.1109/ARFTG.2016.7501961
Publication status	Published - 29 Jun 2016
Event	87th ARFTG Microwave Measurement Conference (ARFTG) - San Fransisco, Canada Duration: 27 May 2016 → …

Conference

Conference	87th ARFTG Microwave Measurement Conference (ARFTG)
Country/Territory	Canada
City	San Fransisco
Period	27/05/16 → …

Keywords

GaN Power Switches
Integrated Switches
Switch efficiency
Power Switches

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10.1109/ARFTG.2016.7501961

Cite this

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title = "Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements",

abstract = "This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.",

keywords = "GaN Power Switches, Integrated Switches, Switch efficiency, Power Switches",

author = "Aaron Pereira and Anthony Parker and Michael Heimlich and Neil Weste",

year = "2016",

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day = "29",

doi = "10.1109/ARFTG.2016.7501961",

language = "English",

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pages = "1--4",

booktitle = "2016 87th ARFTG microwave measurement conference (ARFTG)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "87th ARFTG Microwave Measurement Conference (ARFTG) ; Conference date: 27-05-2016",

}

Pereira, A, Parker, A, Heimlich, M & Weste, N 2016, Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements. in 2016 87th ARFTG microwave measurement conference (ARFTG)., 7501961, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 87th ARFTG Microwave Measurement Conference (ARFTG), San Fransisco, Canada, 27/05/16. https://doi.org/10.1109/ARFTG.2016.7501961

Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements. / Pereira, Aaron; Parker, Anthony; Heimlich, Michael et al.

2016 87th ARFTG microwave measurement conference (ARFTG). Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 1-4 7501961.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements

AU - Pereira, Aaron

AU - Parker, Anthony

AU - Heimlich, Michael

AU - Weste, Neil

PY - 2016/6/29

Y1 - 2016/6/29

N2 - This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.

AB - This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.

KW - GaN Power Switches

KW - Integrated Switches

KW - Switch efficiency

KW - Power Switches

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U2 - 10.1109/ARFTG.2016.7501961

DO - 10.1109/ARFTG.2016.7501961

M3 - Conference proceeding contribution

SN - 9781509013081

SP - 1

EP - 4

BT - 2016 87th ARFTG microwave measurement conference (ARFTG)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 87th ARFTG Microwave Measurement Conference (ARFTG)

Y2 - 27 May 2016

ER -

Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements

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Keywords

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