Characterisation of Integrated GaN Power Switches using Pulsed-IV and Time Domain Measurements

Aaron Pereira*, Anthony Parker, Michael Heimlich, Neil Weste

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pulsed IV characterisation revealed upto 50% reduction in the theoretically available output power, at pulse frequency of 500 KHz and quiescent switch voltage of 60V. Transient measurements done a MMIC switching circuit with integrated drivers fabricated in the same process delivered an output power of 5.8 W at a switching frequency of 100 MHz and drain voltage of 30V.

Original languageEnglish
Title of host publication2016 87th ARFTG microwave measurement conference (ARFTG)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Print)9781509013081
Publication statusPublished - 2016
Event87th ARFTG Microwave Measurement Conference (ARFTG) - San Fransisco, Canada
Duration: 27 May 2016 → …

Conference

Conference87th ARFTG Microwave Measurement Conference (ARFTG)
CountryCanada
CitySan Fransisco
Period27/05/16 → …

Keywords

  • GaN Power Switches
  • Integrated Switches
  • Switch efficiency
  • Power Switches

Cite this