Characterisation of microcrystalline GaN grown on quartz and on sapphire by laser and microwave plasma enhanced metalorganic chemical vapour deposition

Melissa J. Paterson, E. M. Goldys*, H. Y. Zuo, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We present a comparative study of GaN grown on quartz and on sapphire by laser assisted metalorganic chemical vapour deposition. Films were characterised by X-ray diffraction, Raman spectroscopy and optical transmission. Films grown on both substrates are polycrystalline, with the dominant orientation of (0002) wurtzite or (111) cubic for growth temperatures 55O°C and lower. In films grown at 625°C, both on quartz and on sapphire the crystallites show a variety of orientations, all attributed exclusively to wurtzite phase. Films grown at the same temperature are characterised by similar value of the Urbach parameter for both substrates. The Raman spectra in all examined films are alike, and characteristic for a disordered cubic GaN.

Original languageEnglish
Pages (from-to)426-431
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number2
Publication statusPublished - Feb 1998

Keywords

  • Gallium nitride
  • Laser and microwave plasma assisted metalorganic chemical vapour deposition
  • Optical characterisation
  • X-ray diffraction

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