Abstract
We report graphite-free laser etching of diamond surfaces using 266 nm laser pulses for a wide range of incident fluences below the threshold for ablation. The etching rate is proportional to the (fluence)x where x = 1.88 ± 0.16 over the range 10-6 - 10-2 nm per pulse for incident pulse fluences 1 - 60 J/cm2. Surface sensitive near edge x-ray fine absorption structure measurements (partial electron yield NEXAFS) reveal that etching does not significantly alter the surface structure from the initial oxygen terminated and graphite-free state. The etching process, which is consistent with a mechanism involving the desorption of carbon species via the decay of 2-photon excited excitons near the surface, appears to have no threshold and is promising for creating a range of high resolution structures.
Original language | English |
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Pages (from-to) | 576-585 |
Number of pages | 10 |
Journal | Optical Materials Express |
Volume | 1 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Aug 2011 |