Characteristics of 2-photon ultraviolet laser etching of diamond

R. P. Mildren; J. E. Downes; J. D. Brown; B. F. Johnston; E. Granados; D. J. Spence; A. Lehmann; L. Weston; A. Bramble

doi:10.1364/OME.1.000576

Characteristics of 2-photon ultraviolet laser etching of diamond

R. P. Mildren^*, J. E. Downes, J. D. Brown, B. F. Johnston, E. Granados, D. J. Spence, A. Lehmann, L. Weston, A. Bramble

^*Corresponding author for this work

MQ Photonics Research Centre

Research output: Contribution to journal › Article

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Abstract

We report graphite-free laser etching of diamond surfaces using 266 nm laser pulses for a wide range of incident fluences below the threshold for ablation. The etching rate is proportional to the (fluence)^x where x = 1.88 ± 0.16 over the range 10^-6 - 10^-2 nm per pulse for incident pulse fluences 1 - 60 J/cm². Surface sensitive near edge x-ray fine absorption structure measurements (partial electron yield NEXAFS) reveal that etching does not significantly alter the surface structure from the initial oxygen terminated and graphite-free state. The etching process, which is consistent with a mechanism involving the desorption of carbon species via the decay of 2-photon excited excitons near the surface, appears to have no threshold and is promising for creating a range of high resolution structures.

Original language	English
Pages (from-to)	576-585
Number of pages	10
Journal	Optical Materials Express
Volume	1
Issue number	4
DOIs	https://doi.org/10.1364/OME.1.000576
Publication status	Published - 1 Aug 2011

Bibliographical note

This paper was published in Optical materials express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?uri=ome-1-4-576. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

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Mildren, R. P., Downes, J. E., Brown, J. D., Johnston, B. F., Granados, E., Spence, D. J., ... Bramble, A. (2011). Characteristics of 2-photon ultraviolet laser etching of diamond. Optical Materials Express, 1(4), 576-585. https://doi.org/10.1364/OME.1.000576

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title = "Characteristics of 2-photon ultraviolet laser etching of diamond",

abstract = "We report graphite-free laser etching of diamond surfaces using 266 nm laser pulses for a wide range of incident fluences below the threshold for ablation. The etching rate is proportional to the (fluence)x where x = 1.88 ± 0.16 over the range 10-6 - 10-2 nm per pulse for incident pulse fluences 1 - 60 J/cm2. Surface sensitive near edge x-ray fine absorption structure measurements (partial electron yield NEXAFS) reveal that etching does not significantly alter the surface structure from the initial oxygen terminated and graphite-free state. The etching process, which is consistent with a mechanism involving the desorption of carbon species via the decay of 2-photon excited excitons near the surface, appears to have no threshold and is promising for creating a range of high resolution structures.",

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note = "This paper was published in Optical materials express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?uri=ome-1-4-576. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.",

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AU - Downes, J. E.

AU - Brown, J. D.

AU - Johnston, B. F.

AU - Granados, E.

AU - Spence, D. J.

AU - Lehmann, A.

AU - Weston, L.

AU - Bramble, A.

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PY - 2011/8/1

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N2 - We report graphite-free laser etching of diamond surfaces using 266 nm laser pulses for a wide range of incident fluences below the threshold for ablation. The etching rate is proportional to the (fluence)x where x = 1.88 ± 0.16 over the range 10-6 - 10-2 nm per pulse for incident pulse fluences 1 - 60 J/cm2. Surface sensitive near edge x-ray fine absorption structure measurements (partial electron yield NEXAFS) reveal that etching does not significantly alter the surface structure from the initial oxygen terminated and graphite-free state. The etching process, which is consistent with a mechanism involving the desorption of carbon species via the decay of 2-photon excited excitons near the surface, appears to have no threshold and is promising for creating a range of high resolution structures.

AB - We report graphite-free laser etching of diamond surfaces using 266 nm laser pulses for a wide range of incident fluences below the threshold for ablation. The etching rate is proportional to the (fluence)x where x = 1.88 ± 0.16 over the range 10-6 - 10-2 nm per pulse for incident pulse fluences 1 - 60 J/cm2. Surface sensitive near edge x-ray fine absorption structure measurements (partial electron yield NEXAFS) reveal that etching does not significantly alter the surface structure from the initial oxygen terminated and graphite-free state. The etching process, which is consistent with a mechanism involving the desorption of carbon species via the decay of 2-photon excited excitons near the surface, appears to have no threshold and is promising for creating a range of high resolution structures.

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