Characterization and modeling of substrate trapping in HEMTs

James G. Rathmell; Anthony E. Parker

doi:10.1109/EMICC.2007.4412648

Characterization and modeling of substrate trapping in HEMTs

James G. Rathmell, Anthony E. Parker

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

Original language	English
Title of host publication	European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
Editors	Klaus Beilenhoff
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	64-67
Number of pages	4
ISBN (Print)	2874870021, 9782874870026
DOIs	https://doi.org/10.1109/EMICC.2007.4412648
Publication status	Published - 2007
Event	European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 - Munich, Germany Duration: 8 Oct 2007 → 12 Oct 2007

Other

Other	European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
Country/Territory	Germany
City	Munich
Period	8/10/07 → 12/10/07

Keywords

Microwave FET
Semiconductor charge-carrier processes
Semiconductor device measurements
Semiconductor device modeling
Transient response

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10.1109/EMICC.2007.4412648

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Rathmell, J. G., & Parker, A. E. (2007). Characterization and modeling of substrate trapping in HEMTs. In K. Beilenhoff (Ed.), European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 (pp. 64-67). [4412648] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EMICC.2007.4412648

@inproceedings{953f9c733d7a439e92c16960c238afa5,

title = "Characterization and modeling of substrate trapping in HEMTs",

abstract = "We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.",

keywords = "Microwave FET, Semiconductor charge-carrier processes, Semiconductor device measurements, Semiconductor device modeling, Transient response",

author = "Rathmell, {James G.} and Parker, {Anthony E.}",

year = "2007",

doi = "10.1109/EMICC.2007.4412648",

language = "English",

isbn = "2874870021",

pages = "64--67",

editor = "Klaus Beilenhoff",

booktitle = "European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 ; Conference date: 08-10-2007 Through 12-10-2007",

}

Rathmell, JG & Parker, AE 2007, Characterization and modeling of substrate trapping in HEMTs. in K Beilenhoff (ed.), European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007., 4412648, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 64-67, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Munich, Germany, 8/10/07. https://doi.org/10.1109/EMICC.2007.4412648

Characterization and modeling of substrate trapping in HEMTs. / Rathmell, James G.; Parker, Anthony E.

European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. ed. / Klaus Beilenhoff. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2007. p. 64-67 4412648.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Characterization and modeling of substrate trapping in HEMTs

AU - Rathmell, James G.

AU - Parker, Anthony E.

PY - 2007

Y1 - 2007

N2 - We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

AB - We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

KW - Microwave FET

KW - Semiconductor charge-carrier processes

KW - Semiconductor device measurements

KW - Semiconductor device modeling

KW - Transient response

UR - http://www.scopus.com/inward/record.url?scp=43249118801&partnerID=8YFLogxK

U2 - 10.1109/EMICC.2007.4412648

DO - 10.1109/EMICC.2007.4412648

M3 - Conference proceeding contribution

AN - SCOPUS:43249118801

SN - 2874870021

SN - 9782874870026

SP - 64

EP - 67

BT - European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

A2 - Beilenhoff, Klaus

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Y2 - 8 October 2007 through 12 October 2007

ER -

Rathmell JG, Parker AE. Characterization and modeling of substrate trapping in HEMTs. In Beilenhoff K, editor, European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2007. p. 64-67. 4412648 https://doi.org/10.1109/EMICC.2007.4412648

Characterization and modeling of substrate trapping in HEMTs

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