Characterization and modeling of substrate trapping in HEMTs

James G. Rathmell, Anthony E. Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

4 Citations (Scopus)

Abstract

We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
EditorsKlaus Beilenhoff
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages64-67
Number of pages4
ISBN (Print)2874870021, 9782874870026
DOIs
Publication statusPublished - 2007
EventEuropean Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 - Munich, Germany
Duration: 8 Oct 200712 Oct 2007

Other

OtherEuropean Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
CountryGermany
CityMunich
Period8/10/0712/10/07

Keywords

  • Microwave FET
  • Semiconductor charge-carrier processes
  • Semiconductor device measurements
  • Semiconductor device modeling
  • Transient response

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    Rathmell, J. G., & Parker, A. E. (2007). Characterization and modeling of substrate trapping in HEMTs. In K. Beilenhoff (Ed.), European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 (pp. 64-67). [4412648] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EMICC.2007.4412648