Characterization and modeling of substrate trapping in HEMTs

James G. Rathmell, Anthony E. Parker

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    4 Citations (Scopus)

    Abstract

    We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

    Original languageEnglish
    Title of host publicationEuropean Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
    EditorsKlaus Beilenhoff
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages64-67
    Number of pages4
    ISBN (Print)2874870021, 9782874870026
    DOIs
    Publication statusPublished - 2007
    EventEuropean Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 - Munich, Germany
    Duration: 8 Oct 200712 Oct 2007

    Other

    OtherEuropean Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
    Country/TerritoryGermany
    CityMunich
    Period8/10/0712/10/07

    Keywords

    • Microwave FET
    • Semiconductor charge-carrier processes
    • Semiconductor device measurements
    • Semiconductor device modeling
    • Transient response

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