Abstract
The maturity of GaN power transistors grown on conductive Si substrates permits today the integration of gate drivers and half bridges in a monolithic integrated chip. Among others, the back-gating effect arising from the substrate potential poses a challenge for circuit designers and hinders the development of this promising technology. In this paper, we characterize the effect of the substrate potential in the IV characteristics of a commercially available GaN power HEMT. A modified version of the ASM-HEMT compact transistor model which accounts for the effect of the substrate potential on IV and part of the CV characteristics is extracted from these measurements. Through transient simulations of the fitted transistor model, the impact of the bulk potential in the dynamic and static characteristics of power GaN-on-Si HEMTs is investigated.
| Original language | English |
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| Title of host publication | 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) |
| Place of Publication | Piscataway, NJ |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1-6 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781538655412 |
| ISBN (Print) | 9781538655429 |
| DOIs | |
| Publication status | Published - 10 Sept 2018 |
| Event | 19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2018 - Padova, Italy Duration: 25 Jun 2018 → 28 Jun 2018 |
Conference
| Conference | 19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2018 |
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| Country/Territory | Italy |
| City | Padova |
| Period | 25/06/18 → 28/06/18 |
Keywords
- HEMTs
- Gallium Nitride
- current-voltage characteristics
- power semiconductor device
- semiconductor device modeling
- substrate potential