Characterization and simulation of optical absorption in Si nanocrystals

Xuguang Jia; Lingfeng Wu; Ziyun Lin; Tian Zhang; Terry Chien-Jen Yang; Hongze Xia; Binesh Puthen-Veettil; Gavin Conibeer; Ivan Perez-Wurfl

doi:10.1002/pssc.201400089

Characterization and simulation of optical absorption in Si nanocrystals

Xuguang Jia^*, Lingfeng Wu, Ziyun Lin, Tian Zhang, Terry Chien-Jen Yang, Hongze Xia, Binesh Puthen-Veettil, Gavin Conibeer, Ivan Perez-Wurfl

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

1 Citation (Scopus)

Abstract

The application of silicon quantum dot (Si QD) based material is regarded as a promising approach for the realization of high efficiency solar cells. When silicon nanocrystals are made very small (within the vicinity of the exciton Bohr radius of bulk Si), they behave as quantum dots due to the three-dimensional quantum confinement, which could cause the material's effective optical band gap to increase. The optical band gap can be deduced from the absorption coefficient. In this paper, we analyze optical absorption and emission processes in Si QD and attempt to simulate the band-edge absorption features based on the photoluminescence spectrum. We also investigate the application of ellipsometry in the study of optical properties of Si QD thin films. Based on WVASE32 modeling tool, a homogeneous mixture model is developed to extract the absorption coefficient of this material. From these results, we extract the effective optical band gap and analyze optical properties of Si QDs materials.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	12
Issue number	3
Early online date	4 Feb 2015
DOIs	https://doi.org/10.1002/pssc.201400089
Publication status	Published - Mar 2015
Externally published	Yes
Event	Analytical Techniques for Precise Characterisation of Nanomaterials, Symposium H of the European Materials Research Society (E-MRS) Spring Meeting 2014 - Lille, France Duration: 26 May 2014 → 30 May 2014

Keywords

silicon nanocrystals
ellipsometry
absorption coefficient
photoluminescence
band gap extraction

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10.1002/pssc.201400089

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title = "Characterization and simulation of optical absorption in Si nanocrystals",

abstract = "The application of silicon quantum dot (Si QD) based material is regarded as a promising approach for the realization of high efficiency solar cells. When silicon nanocrystals are made very small (within the vicinity of the exciton Bohr radius of bulk Si), they behave as quantum dots due to the three-dimensional quantum confinement, which could cause the material's effective optical band gap to increase. The optical band gap can be deduced from the absorption coefficient. In this paper, we analyze optical absorption and emission processes in Si QD and attempt to simulate the band-edge absorption features based on the photoluminescence spectrum. We also investigate the application of ellipsometry in the study of optical properties of Si QD thin films. Based on WVASE32 modeling tool, a homogeneous mixture model is developed to extract the absorption coefficient of this material. From these results, we extract the effective optical band gap and analyze optical properties of Si QDs materials.",

keywords = "silicon nanocrystals, ellipsometry, absorption coefficient, photoluminescence, band gap extraction",

author = "Xuguang Jia and Lingfeng Wu and Ziyun Lin and Tian Zhang and Yang, {Terry Chien-Jen} and Hongze Xia and Binesh Puthen-Veettil and Gavin Conibeer and Ivan Perez-Wurfl",

year = "2015",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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number = "3",

note = "Analytical Techniques for Precise Characterisation of Nanomaterials, Symposium H of the European Materials Research Society (E-MRS)<br/>Spring Meeting 2014, ALTECH 2014 ; Conference date: 26-05-2014 Through 30-05-2014",

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Characterization and simulation of optical absorption in Si nanocrystals. / Jia, Xuguang; Wu, Lingfeng; Lin, Ziyun; Zhang, Tian; Yang, Terry Chien-Jen; Xia, Hongze; Puthen-Veettil, Binesh; Conibeer, Gavin; Perez-Wurfl, Ivan.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 12, No. 3, 03.2015, p. 271-274.

Research output: Contribution to journal › Conference paper › peer-review

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AU - Wu, Lingfeng

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AU - Zhang, Tian

AU - Yang, Terry Chien-Jen

AU - Xia, Hongze

AU - Puthen-Veettil, Binesh

AU - Conibeer, Gavin

AU - Perez-Wurfl, Ivan

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AB - The application of silicon quantum dot (Si QD) based material is regarded as a promising approach for the realization of high efficiency solar cells. When silicon nanocrystals are made very small (within the vicinity of the exciton Bohr radius of bulk Si), they behave as quantum dots due to the three-dimensional quantum confinement, which could cause the material's effective optical band gap to increase. The optical band gap can be deduced from the absorption coefficient. In this paper, we analyze optical absorption and emission processes in Si QD and attempt to simulate the band-edge absorption features based on the photoluminescence spectrum. We also investigate the application of ellipsometry in the study of optical properties of Si QD thin films. Based on WVASE32 modeling tool, a homogeneous mixture model is developed to extract the absorption coefficient of this material. From these results, we extract the effective optical band gap and analyze optical properties of Si QDs materials.

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KW - ellipsometry

KW - absorption coefficient

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