Characterization and simulation of optical absorption in Si nanocrystals

Xuguang Jia*, Lingfeng Wu, Ziyun Lin, Tian Zhang, Terry Chien-Jen Yang, Hongze Xia, Binesh Puthen-Veettil, Gavin Conibeer, Ivan Perez-Wurfl

*Corresponding author for this work

Research output: Contribution to journalConference paperpeer-review

1 Citation (Scopus)

Abstract

The application of silicon quantum dot (Si QD) based material is regarded as a promising approach for the realization of high efficiency solar cells. When silicon nanocrystals are made very small (within the vicinity of the exciton Bohr radius of bulk Si), they behave as quantum dots due to the three-dimensional quantum confinement, which could cause the material's effective optical band gap to increase. The optical band gap can be deduced from the absorption coefficient. In this paper, we analyze optical absorption and emission processes in Si QD and attempt to simulate the band-edge absorption features based on the photoluminescence spectrum. We also investigate the application of ellipsometry in the study of optical properties of Si QD thin films. Based on WVASE32 modeling tool, a homogeneous mixture model is developed to extract the absorption coefficient of this material. From these results, we extract the effective optical band gap and analyze optical properties of Si QDs materials.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number3
Early online date4 Feb 2015
DOIs
Publication statusPublished - Mar 2015
Externally publishedYes
EventAnalytical Techniques for Precise Characterisation of Nanomaterials, Symposium H of the European Materials Research Society (E-MRS)
Spring Meeting 2014
- Lille, France
Duration: 26 May 201430 May 2014

Keywords

  • silicon nanocrystals
  • ellipsometry
  • absorption coefficient
  • photoluminescence
  • band gap extraction

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