Abstract
The application of silicon quantum dot (Si QD) based material is regarded as a promising approach for the realization of high efficiency solar cells. When silicon nanocrystals are made very small (within the vicinity of the exciton Bohr radius of bulk Si), they behave as quantum dots due to the three-dimensional quantum confinement, which could cause the material's effective optical band gap to increase. The optical band gap can be deduced from the absorption coefficient. In this paper, we analyze optical absorption and emission processes in Si QD and attempt to simulate the band-edge absorption features based on the photoluminescence spectrum. We also investigate the application of ellipsometry in the study of optical properties of Si QD thin films. Based on WVASE32 modeling tool, a homogeneous mixture model is developed to extract the absorption coefficient of this material. From these results, we extract the effective optical band gap and analyze optical properties of Si QDs materials.
Original language | English |
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Pages (from-to) | 271-274 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 12 |
Issue number | 3 |
Early online date | 4 Feb 2015 |
DOIs | |
Publication status | Published - Mar 2015 |
Externally published | Yes |
Event | Analytical Techniques for Precise Characterisation of Nanomaterials, Symposium H of the European Materials Research Society (E-MRS) Spring Meeting 2014 - Lille, France Duration: 26 May 2014 → 30 May 2014 |
Keywords
- silicon nanocrystals
- ellipsometry
- absorption coefficient
- photoluminescence
- band gap extraction