Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS

Xin Li*, T. L. Tansley, K. S. A. Butcher, D. Alexiev

*Corresponding author for this work

Research output: Contribution to journalReview article

6 Citations (Scopus)

Abstract

AlN/GaAs heterointerfaces formed by LCVD were investigated by the correlation DLTS technique. Three methods were used to distinguish between the signals from bulk traps and from interface traps, including comparison of the signals from Schottky and MIS diodes, variation of pulse height and different GaAs surface treatments. The surface potentials determined by Arrhenius plots agree well with those determined by the conventional high frequency method. Interface traps measurable by the correlation DLTS method lie in the energy range Ec - 0.69 to 0.6 eV with densities of 3 × 1012 and 2 × 1013 eV-1 cm-2 at the respective extremities. Capture cross-sections are determined to be about 10-13 cm2 by the small pulse ERDLTS method, while time constants exponentially decrease from midgap reaching 2.1 μs at Ec - 0.6 eV.

Original languageEnglish
Pages (from-to)381-385
Number of pages5
JournalSolid State Electronics
Volume36
Issue number3
DOIs
Publication statusPublished - 1993

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