Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS

Xin Li; T. L. Tansley; K. S. A. Butcher; D. Alexiev

doi:10.1016/0038-1101(93)90090-D

Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS

Xin Li^*, T. L. Tansley, K. S. A. Butcher, D. Alexiev

^*Corresponding author for this work

Faculty of Science and Engineering

Research output: Contribution to journal › Review article › peer-review

6 Citations (Scopus)

Abstract

AlN/GaAs heterointerfaces formed by LCVD were investigated by the correlation DLTS technique. Three methods were used to distinguish between the signals from bulk traps and from interface traps, including comparison of the signals from Schottky and MIS diodes, variation of pulse height and different GaAs surface treatments. The surface potentials determined by Arrhenius plots agree well with those determined by the conventional high frequency method. Interface traps measurable by the correlation DLTS method lie in the energy range E_c - 0.69 to 0.6 eV with densities of 3 × 10¹² and 2 × 10¹³ eV^-1 cm^-2 at the respective extremities. Capture cross-sections are determined to be about 10^-13 cm² by the small pulse ERDLTS method, while time constants exponentially decrease from midgap reaching 2.1 μs at E_c - 0.6 eV.

Original language	English
Pages (from-to)	381-385
Number of pages	5
Journal	Solid State Electronics
Volume	36
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(93)90090-D
Publication status	Published - 1993

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@article{a7e5df32f35e40098cfb152cdf9e8512,

title = "Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS",

abstract = "AlN/GaAs heterointerfaces formed by LCVD were investigated by the correlation DLTS technique. Three methods were used to distinguish between the signals from bulk traps and from interface traps, including comparison of the signals from Schottky and MIS diodes, variation of pulse height and different GaAs surface treatments. The surface potentials determined by Arrhenius plots agree well with those determined by the conventional high frequency method. Interface traps measurable by the correlation DLTS method lie in the energy range Ec - 0.69 to 0.6 eV with densities of 3 × 1012 and 2 × 1013 eV-1 cm-2 at the respective extremities. Capture cross-sections are determined to be about 10-13 cm2 by the small pulse ERDLTS method, while time constants exponentially decrease from midgap reaching 2.1 μs at Ec - 0.6 eV.",

author = "Xin Li and Tansley, {T. L.} and Butcher, {K. S. A.} and D. Alexiev",

year = "1993",

doi = "10.1016/0038-1101(93)90090-D",

language = "English",

volume = "36",

pages = "381--385",

journal = "Solid State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS

AU - Li, Xin

AU - Tansley, T. L.

AU - Butcher, K. S. A.

AU - Alexiev, D.

PY - 1993

Y1 - 1993

N2 - AlN/GaAs heterointerfaces formed by LCVD were investigated by the correlation DLTS technique. Three methods were used to distinguish between the signals from bulk traps and from interface traps, including comparison of the signals from Schottky and MIS diodes, variation of pulse height and different GaAs surface treatments. The surface potentials determined by Arrhenius plots agree well with those determined by the conventional high frequency method. Interface traps measurable by the correlation DLTS method lie in the energy range Ec - 0.69 to 0.6 eV with densities of 3 × 1012 and 2 × 1013 eV-1 cm-2 at the respective extremities. Capture cross-sections are determined to be about 10-13 cm2 by the small pulse ERDLTS method, while time constants exponentially decrease from midgap reaching 2.1 μs at Ec - 0.6 eV.

AB - AlN/GaAs heterointerfaces formed by LCVD were investigated by the correlation DLTS technique. Three methods were used to distinguish between the signals from bulk traps and from interface traps, including comparison of the signals from Schottky and MIS diodes, variation of pulse height and different GaAs surface treatments. The surface potentials determined by Arrhenius plots agree well with those determined by the conventional high frequency method. Interface traps measurable by the correlation DLTS method lie in the energy range Ec - 0.69 to 0.6 eV with densities of 3 × 1012 and 2 × 1013 eV-1 cm-2 at the respective extremities. Capture cross-sections are determined to be about 10-13 cm2 by the small pulse ERDLTS method, while time constants exponentially decrease from midgap reaching 2.1 μs at Ec - 0.6 eV.

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U2 - 10.1016/0038-1101(93)90090-D

DO - 10.1016/0038-1101(93)90090-D

M3 - Review article

AN - SCOPUS:0027559021

SN - 0038-1101

VL - 36

SP - 381

EP - 385

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3

ER -

Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS

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