Abstract
GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices were characterized for power switching and a simple figure of merit was calculated to understand the device performance in terms of its ON resistance and input capacitance.
Original language | English |
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Title of host publication | PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 64-66 |
Number of pages | 3 |
ISBN (Print) | 9781479927784 |
DOIs | |
Publication status | Published - 2014 |
Event | 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014 - Newport Beach, CA, United States Duration: 19 Jan 2014 → 22 Jan 2014 |
Other
Other | 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014 |
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Country/Territory | United States |
City | Newport Beach, CA |
Period | 19/01/14 → 22/01/14 |