Characterization of GaN HEMTs for integrated supply modulator

Aaron Pereira, Anthony Parker, Michael Heimlich, Neil Weste, Larry Dunleavy

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices were characterized for power switching and a simple figure of merit was calculated to understand the device performance in terms of its ON resistance and input capacitance.

Original languageEnglish
Title of host publicationPAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages64-66
Number of pages3
ISBN (Print)9781479927784
DOIs
Publication statusPublished - 2014
Event2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014 - Newport Beach, CA, United States
Duration: 19 Jan 201422 Jan 2014

Other

Other2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014
CountryUnited States
CityNewport Beach, CA
Period19/01/1422/01/14

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