Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

T. Paskova*, P. P. Paskov, E. M. Goldys, E. Valcheva, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, S. Hautakangas, K. Saarinen, C. F. Carlström, Q. Wahab, B. Monemar

*Corresponding author for this work

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