Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

E. M. Goldys*, M. Godlewski, T. Paskova, G. Pozina, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume6
Publication statusPublished - 2001

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