Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

E. M. Goldys; M. Godlewski; T. Paskova; G. Pozina; B. Monemar

Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

E. M. Goldys^*, M. Godlewski, T. Paskova, G. Pozina, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	6
Publication status	Published - 2001

Cite this

@article{4a25621dd69a4412b7ab5818ffdf963d,

title = "Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN",

abstract = "We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.",

author = "Goldys, {E. M.} and M. Godlewski and T. Paskova and G. Pozina and B. Monemar",

year = "2001",

language = "English",

volume = "6",

pages = "1--6",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

AU - Goldys, E. M.

AU - Godlewski, M.

AU - Paskova, T.

AU - Pozina, G.

AU - Monemar, B.

PY - 2001

Y1 - 2001

N2 - We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

AB - We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-resolved photoluminescence. The observed properties of the emission are consistent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.

UR - http://www.scopus.com/inward/record.url?scp=0005741805&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0005741805

SN - 1092-5783

VL - 6

SP - 1

EP - 6

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

Abstract

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