Characterization of RF Noise in UTBB FD-SOI MOSFET

Pragya Kushwaha; Avirup Dasgupta; Yogendra Sahu; Sourabh Khandelwal; Chenming Hu; Yogesh Singh Chauhan

doi:10.1109/JEDS.2016.2603181

Characterization of RF Noise in UTBB FD-SOI MOSFET

Pragya Kushwaha^*, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.

Original language	English
Article number	7572129
Pages (from-to)	379-386
Number of pages	8
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/JEDS.2016.2603181
Publication status	Published - 1 Nov 2016
Externally published	Yes

Keywords

device modeling
electrical characterization
FDSOI
high frequency noise
MOSFET
RF
Thermal noise

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10.1109/JEDS.2016.2603181

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title = "Characterization of RF Noise in UTBB FD-SOI MOSFET",

abstract = "In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.",

keywords = "device modeling, electrical characterization, FDSOI, high frequency noise, MOSFET, RF, Thermal noise",

author = "Pragya Kushwaha and Avirup Dasgupta and Yogendra Sahu and Sourabh Khandelwal and Chenming Hu and Chauhan, {Yogesh Singh}",

year = "2016",

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doi = "10.1109/JEDS.2016.2603181",

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T1 - Characterization of RF Noise in UTBB FD-SOI MOSFET

AU - Kushwaha, Pragya

AU - Dasgupta, Avirup

AU - Sahu, Yogendra

AU - Khandelwal, Sourabh

AU - Hu, Chenming

AU - Chauhan, Yogesh Singh

PY - 2016/11/1

Y1 - 2016/11/1

N2 - In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.

AB - In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.

KW - device modeling

KW - electrical characterization

KW - FDSOI

KW - high frequency noise

KW - MOSFET

KW - RF

KW - Thermal noise

UR - http://www.scopus.com/inward/record.url?scp=84994181941&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2016.2603181

DO - 10.1109/JEDS.2016.2603181

M3 - Article

AN - SCOPUS:84994181941

SN - 2168-6734

VL - 4

SP - 379

EP - 386

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 6

M1 - 7572129

ER -

Characterization of RF Noise in UTBB FD-SOI MOSFET

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Keywords

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