TY - JOUR
T1 - Characterization of systematic and random diode mismatches in antiparallel-diode mixers
AU - Gutta, Venkata
AU - Parker, Anthony Edward
AU - Fattorini, Anthony
N1 - Copyright 2009 IEEE. Reprinted from IEEE transactions on microwave theory and techniques, Volume 57, Issue 12, 3153-3162. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2009/12
Y1 - 2009/12
N2 - Diode mismatch in an antiparallel-diode (APD) mixer results in an unwanted virtual local-oscillator (LO) leakage. At a radio system level, the virtual LO leakage is primarily a challenge of meeting spurious emission requirements. At a device level, it is a challenge of circuit yield, determined by the statistical variation in diode mismatch of a semiconductor fabrication process. This paper introduces methods of characterizing diode mismatch in APD mixers. The parameters of these characterization methods can be used to make an informed selection of the fabrication process, diode size, and LO pump power for reduced virtual LO leakage and improved yield.
AB - Diode mismatch in an antiparallel-diode (APD) mixer results in an unwanted virtual local-oscillator (LO) leakage. At a radio system level, the virtual LO leakage is primarily a challenge of meeting spurious emission requirements. At a device level, it is a challenge of circuit yield, determined by the statistical variation in diode mismatch of a semiconductor fabrication process. This paper introduces methods of characterizing diode mismatch in APD mixers. The parameters of these characterization methods can be used to make an informed selection of the fabrication process, diode size, and LO pump power for reduced virtual LO leakage and improved yield.
UR - http://www.scopus.com/inward/record.url?scp=73049086401&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2009.2034443
DO - 10.1109/TMTT.2009.2034443
M3 - Article
AN - SCOPUS:73049086401
SN - 0018-9480
VL - 57
SP - 3153
EP - 3162
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 12
M1 - 5325622
ER -